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Igbt Saturation Voltage

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Total 4715 products for igbt saturation voltage Manufacture & Suppliers

62MM Dual IGBT Power Module Medium Power FF200R17KE4HOSA1 SP000713374

... kV Collector-emitter saturation voltage: 2.3 V Continuous collector current at 25 C: 310 A Gate-emitter leakage current: 100 nA Pd-power dissipation: 1250 W ......

Eastern Stor International Ltd.
Guangdong,China

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1.7KV IGBT Modules IHM I XHP PP FF1800R17IP5BPSA1 SP001310752

...: 1.7 kV Collector-emitter saturation voltage: 2.1 V Continuous collector current at 25 C: 1.8 kA Gate-emitter leakage current: 400 nA Pd-power dissipation: - Package / ......

Eastern Stor International Ltd.
Guangdong,China

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PSS05S92F6-AG Mitsubishi Electric IGBT Module Super Mini DIPIPM Version 6 6-PAC

...Mitsubishi Electric IGBT module Super Mini DIPIPM Version 6 6-PAC Manufacturer: Mitsubishi Electric Products: IGBT Silicon Modules Configuration: 6-Pack Maximum collector-emitter voltage VCEO: 600 V Collecto...

Eastern Stor International Ltd.
Guangdong,China

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STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

...IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technol...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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BSM25GD120DLCE3224 1200V/25A IGBT Module Dual Configuration Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for UPS & Solar Inverters

.../25A IGBT Module Dual Configuration Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for UPS & Solar Inverters Features Voltage/Current Rating: 1200 V / 25 A Config...

TOP Electronic Industry Co., Ltd.
China

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BSM50GD120DN2E3226 1200V/50A IGBT Module Dual Configuration Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for Motor Drives & Solar Inverters

... Features Voltage/Current Rating: 1200 V / 50 A Configuration: Dual IGBT Low Saturation Voltage: VCE(sat) for reduced conduction losses. Low Switching Losses: Optimized for high-frequency operation. Built-in...

TOP Electronic Industry Co., Ltd.
China

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BSM50GX120DN2 1200V/50A IGBT Module Dual Configuration Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for Motor Drives & Solar Inverters

...Voltage/Current Rating: 1200 V / 50 A Configuration: Dual IGBT Low Saturation Voltage: VCE(sat) for reduced conduction losses. Low Switching Losses: Optimized for high-frequency operation. Built-in NTC Therm...

TOP Electronic Industry Co., Ltd.
China

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BSM150GD120DN2 1200V/150A IGBT Module Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for Heavy-Duty Motor Drives & Wind Power Inverters

...Voltage/Current Rating: 1200 V / 50 A Configuration: Dual IGBT Low Saturation Voltage: VCE(sat) for reduced conduction losses. Low Switching Losses: Optimized for high-frequency operation. Built-in NTC Therm...

TOP Electronic Industry Co., Ltd.
China

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IKW30N60H3 Field Stop IGBT Power Transistor 600V 30A 187W Low EMI

...Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1....

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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STGW80V60DF IGBT Power Transistor 600V 80A 469W For Photovoltaic Inverters

... • Very high frequency converters Specifications Product Category: IGBT Transistors Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.85 V Maximum Ga...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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IKW40N120T2 Insulated Gate Bipolar Transistor IGBT 40A 1200V 480W For Converters

... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Maximum Gate Emitter Voltage: - 20 V, + 20...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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IKW40N65H5 Insulated Gate Bipolar Transistor IGBT Transistors 650V 74A 250W

...s Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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1200V 100A IGBT Module FP100R12N2T7B11BPSA1 Trench Field Stop Three Phase Inverter

... and EC7 diode technology based on the latest micro-pattern trenches technology. Specification Of FP100R12N2T7B11BPSA1 Part Number FP100R12N2T7B11BPSA1 Product: IGBT Silicon Modules Configuration: 3-Phase In...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FP50R12KT4B11BPSA1 IGBT Module Trench Field Stop Module

...IGBT Modules FP50R12KT4B11BPSA1 IGBT Module Trench Field Stop Module Product Description Of FP50R12KT4B11BPSA1 FP50R12KT4B11BPSA1 feature an integrated temperature sensor, high current density, and low VCE. ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FGH20N60SFD Field Stop IGBT Power Transistors 600V 20A 165W Through Hole

... for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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FGH40N60SFD IGBT Power Transistor 600V 40A Field Stop Transistor TO-247-3 290W

...Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotiv...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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Chassis Mount FS150R12N2T7B15BPSA1 1200V 150A Transistors IGBT Modules

...IGBT Modules Product Description Of FS150R12N2T7B15BPSA1 FS150R12N2T7B15BPSA1 is econoPIM™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC / TIM. Specification Of FS150R12N2T...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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STGB10NC60KDT4 IGBT Power Transistor 600V 20A 65W N Channel For Motor Drives

... drives Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: D2PAK-3 Mounting Style: SMD/SMT Collector- Emitter Voltage VCEO Max: 600 V Collector...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD ser...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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FGA25N120ANTD Power Switching IGBT Power Transistor 1200V 40A 310W TO3P

...IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for applica...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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