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... Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low satu...
...coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product Attr...
...IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-p...
... a short circuit withstand time of 5s, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT is suitable for demanding applications such as...
Product Overview The IGP06N60T is a TRENCHSTOP Series Low Loss IGBT designed for 600V applications. It features very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit with...
Product Overview The AFGHL75T65SQ is a Field Stop Trench IGBT from onsemi, utilizing novel 4th generation IGBT technology. It offers optimal performance with low conduction and switching losses, making it ideal...
Product Overview The SPT40N120F1A is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and...
Product Overview The SPT10N120T1 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and robust performance. It features Trench-Stop Technology for very tight parameter distribution, high rugg...
...POWER LOW SATURATION TRANSISTOR The ZX5T951G is a 60V PNP medium power transistor designed for low saturation applications. It offers a high continuous collector current of -5.5A and a peak pulse current of ...
.... It features a high continuous current capability of 5A, a low equivalent on-resistance with RSAT of 30m, and a low saturation voltage of VCE(SAT) < 65mV @ IC = 1A. The transistor also offers specified hFE ...
...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT...
...saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT...
MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features S and NSV Prefix for Automot...
Product Overview The ZXTN25100DFH is a 100V NPN low saturation transistor in a SOT23 package. It offers high gain, low saturation voltage (VCE(sat) < 95mV @ 1A), and an RCE(sat) of 80m. This device is suitable ...
... The FMMT720 is a 40V PNP Silicon Low Saturation Transistor designed for high-performance applications. It offers a continuous collector current of -1.5A and a peak pulse current of -4A, with a low saturatio...
...Overview The ZXTP2012Z is a 60V PNP low saturation transistor in a SOT89 package, offering high continuous current capability of up to -4.3A and a low equivalent on-resistance (RSAT = 32m). It features a low...
... a low saturation voltage (VCE(sat) < -200mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 97m). The transistor is designed for applications requiring high ......
...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/subandgt; 4:Power...
...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT...
...a Silicon NPN Darlington Power Transistor designed for high-voltage switching igniter applications. It features a high Collector-Emitter Sustaining Voltage of 300V(Min), a low Collector-Emitter Saturation Vo...