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Igbt Saturation Voltage

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Total 4715 products for igbt saturation voltage Manufacture & Suppliers

IGBT Power Module MP6759 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... 6 IGBTs are built into 1 package. [1] Enhancement-mode [1] Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) [1] High speed: tf = 0.35 µs (max) (IC = 10 A) Specifications: part no. MP6759 Manufac...

Mega Source Elec.Limited
China

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FGL40N120ANDTU 40A 1200V Welding Machine IGBT Single Tube NPT TO-264

...IGBT Single Tube NPT TO-264 Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction He...

ChongMing Group (HK) Int'l Co., Ltd
China

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IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G4GM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG15H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15H1BS1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG15H6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15J6ES40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG15N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG15N6ES42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG15Q6ES1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG15Q6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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