| Sign In | Join Free | My burrillandco.com |
|
...Overview The LBSS5240LT1G is a PNP silicon transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to...
...wide range of applications. They offer excellent performance with high current gain and low saturation voltages. The S-prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive...
Product Overview The LESHAN RADIO COMPANY, LTD. LBSS4240LT1G is an NPN silicon transistor designed for general-purpose applications. It features a low collector-emitter saturation voltage (VCE(sat)), high curre...
Product Overview This NPN transistor offers low collector-emitter saturation voltage, high collector current capability and gain, leading to high efficiency and reduced heat generation. Its smaller PCB area req...
... voltage (typically 150mV), and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2088 and is suitable for low frequency amplifiers and ......
... applications. It features high speed switching with a typical fall time of 35ns at IC=2A, low saturation voltage (typically 200mV at IC=1.0A, IB=100mA), and strong discharge power for inductive and capaciti...
Product Overview The 2SCR553P5 is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage and high-speed switching capabiliti...
Product Overview The 2SC5876 is a medium power transistor designed for high-speed switching applications. It features high speed switching with a typical fall time of 80ns, low saturation voltage (typically 150...
... flat package, high-speed switching time, and a low collector-emitter saturation voltage. This transistor is complementary to the 2SA1213 and is suitable for use in power amplifiers and switching circuits. P...
... PNP Power Transistor designed for general-purpose power amplification and switching. It features a low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0V Max at IC = 8A) and fast switching speeds. This t...
Product Overview The 2SB1424 is a PNP transistor designed for various electronic applications. It features a low saturation voltage and excellent DC current gain, making it suitable for general-purpose amplific...
Product Overview The 2SD2150 is an NPN transistor designed for general-purpose applications. It offers excellent current-to-gain characteristics and a low collector saturation voltage (VCE(sat)). This transisto...
... collector current, high current gain, and a low collector-emitter saturation voltage. Complementary to the BC807 (PNP), this transistor is suitable for various electronic circuits requiring efficient amplif...
... voltage and high power dissipation capability of up to 10W (Max) at TC=25. They are engineered for robust device performance and reliable operation with minimum ......
Product Overview The 2SC4672 is an NPN transistor designed for various electronic applications. It features low saturation voltage and excellent hFE characteristics, making it a complementary part to the 2SA179...
... voltage, making it suitable for various electronic circuits. This transistor is available in different ranks, each with a specific DC current gain range, and is supplied in an ......
...Overview The 2SC2655 is an NPN Silicon Transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(SAT) = 0.5V Max.) and high-speed switching capabilit...
... applications, offering high collector current, high current gain, and a low collector-emitter saturation voltage. It is available in various ranks, each with a specific DC current gain range and marking cod...
... converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V max), and fast switching speeds (tf = 85 ns ty...
... Overview The UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA a...