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...TECHNOLOGIES CO., LTD 2SC2655 is an NPN Silicon Transistor designed for power amplifier and power switching applications. It features low saturation voltage (VCE(SAT)= 0.5V Max.) and high-speed switching tim...
Product Overview The 2SD2470 is an NPN Silicon Transistor designed for strobo and DC/DC converters. It features a low saturation voltage of 0.25V (typ) at IC/IB= 3A/0.1A and can handle a collector current of 5A...
... 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC = -1A) and high-speed ...
... input-output common mode transient immunity. The separated pin for photodiodes and first gain stages (VCC) allows for lower output saturation voltage and higher speed operation...
...Voltage Input DC Argon Arc IGBT TIG Welding Machine TIG315MA Features: 1, Using IGBT Single-tube inverter technology; 2, Wide-Voltage design; input volatge is 160v-560v 3, Full Bridge structure, good perform...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
Product Overview The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of 80V (BVCEO). This transistor complements the 2SB11...
Product Overview This document details the technical specifications for the NPN Power Silicon Transistor series, qualified per MIL-PRF-19500/454. These transistors are designed for power applications and are av...
Product Overview The FMMT491 is an NPN Silicon Epitaxial Planar Transistor designed with improved VCE(sat) and reverse blocking specifications. It is suitable for various electronic applications requiring high ...
Product Overview The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO=80V. This transistor complements the 2SB1198...
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code ORDER...
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code ORDER...
Product Overview The 2SC4097 is a medium power NPN transistor designed for driving circuits and low-frequency amplifiers. It features a high maximum collector current (ICMax = 0.5A) and low VCE(sat) for optimal...
Product Overview The UTC 2SB1260 is an epitaxial planar type PNP silicon transistor designed for high breakdown voltage and high current applications. It offers good hFE linearity and low VCE(SAT), making it su...
Product Overview The BC807 series are general-purpose PNP bipolar transistors, ideally suited for automatic insertion. They feature epitaxial planar die construction and are available in complementary NPN types...
Product Overview The 2SB1197K is a PNP plastic-encapsulate transistor designed for general-purpose applications. It offers a very low VCE(sat) of typically less than 0.4V at IC/IB = 500mA / 50mA, complementing ...
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Product Overview The LBSS4250Y3T1G and S-LBSS4250Y3T1G are NPN Middle Power Transistors designed for middle power driver applications. They offer low VCE(sat) and are suitable for motor drivers and LED drivers....