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Total 5466 products for igbt saturation voltage Manufacture & Suppliers

IGBT Module YANGJIE MG150HF12MRC2 with 1200V Collector Emitter Voltage and 210A DC Collector Current

Product Overview The MG150HF12MRC2 S-M242 is a high-performance IGBT module designed for industrial applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low lo...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High Speed IGBT Transistor Module IXGH48N60C3D1 For 40-100kHz Switching

.... This reliable NPT IGBT transistor offers several benefits, including: Pros: - Efficient power management: With a low collector-to-emitter saturation voltage, this transistor allows for more efficient power...

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
China

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FS75R12KT3 1200V 75A IGBT Module Trenchstop IGBT3 Fast EmCon Diode Sixpack Configuration Integrated NTC Low Inductance High Power Density EconoPACK™2 for Drives

...IGBT Module Trenchstop IGBT3 Fast EmCon Diode Sixpack Configuration Integrated NTC Low Inductance High Power Density EconoPACK™2 for Drives Features Technology: Employs fast trench/field-stop IGBT3 and Emitt...

TOP Electronic Industry Co., Ltd.
China

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IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G4GM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG15H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15H1BS1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG15H6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15J6ES40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15N6ES42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG15Q6ES1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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