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Igbt Saturation Voltage

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Total 5466 products for igbt saturation voltage Manufacture & Suppliers

IKW50N60TFKSA1 IGBT Transistors LOW LOSS DuoPack 600V 50A

IGBT Transistors LOW LOSS DuoPack 600V 50A Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: IGBT Transistors RoHS: Details Technology: Si Package / Case: TO-247-3 Moun...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

...IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Sty...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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375W Automobile Chips AFGHL75T65SQD IGBT Trench Field Stop 650V Single IGBT Transistor

...IGBT Trench Field Stop 650V Single IGBT Transistor Product Description Of AFGHL75T65SQD AFGHL75T65SQD offers the optimum performance with both low conduction and switching losses for a high efficiency opera...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FGH60N60SFDTU Power Mosfet Module 600V , 60A Field Stop IGBT

... • Induction Heating, UPS, SMPS, PFC General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and ...

ChongMing Group (HK) Int'l Co., Ltd
China

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Integrated Circuit Chip FGHL50T65MQDTL4 Single IGBTs 80A 268W Transistors

... and higher efficiency. FGHL50T65MQDTL4 offering both low on−state voltage and minimal switching loss. Specification Of FGHL50T65MQDTL4 Part Number FGHL50T65MQDTL4 Collector-Emitter Saturation Voltage: 1.45 ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

... & Soft Recovery FRD ●Pb - free Lead Plating ; RoHS Compliant Description: RGS Field Stop Trench Automotive IGBTs ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs...

Shenzhen Zhaocun Electronics Co., Ltd.
China

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FGL40N120ANDTU FGL40N120 IGBT NPT 1200V 64A 500W Through Hole TO-264-3

...IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power suppli...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Electronic Integrated Circuits IKW30N65ET7XKSA1 IGBT Trench Field Stop Transistors

... Circuits IKW30N65ET7XKSA1 IGBT Trench Field Stop Transistors Product Description Of IKW30N65ET7XKSA1 IKW30N65ET7XKSA1 is an efficient short-circuit rugged discrete IGBT providing at least 10% lower saturati...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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650V Transistors IXXX140N65B4H1 Single IGBTs Transistors TO-247-3 Integrated Circuit Chip

... Punch Through IGBT for 10-30kHz Switching. Specification Of IXXX140N65B4H1 Part Number: IXXX140N65B4H1 Technology: Si Package / Case: PLUS247-3 Configuration: Single Collector-Emitter Saturation Voltage: 1....

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

...IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25...

ChongMing Group (HK) Int'l Co., Ltd
China

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FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

... Recovery Diode General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanch...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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FGL40N120ANDTU FGL40N120 IGBT NPT 1200V 64A 500W Through Hole TO-264-3

...IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power suppli...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module

...IGBT Features • Maximum Junction Temperature : TJ =175℃ • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • Hi...

ChongMing Group (HK) Int'l Co., Ltd
China

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FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

... • Induction Heating, UPS, SMPS, PFC General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and ...

Anterwell Technology Ltd.
Guangdong,China

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FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264

...IGBT Single Tube NPT TO-264 Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction He...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT

...IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25...

Anterwell Technology Ltd.
Guangdong,China

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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

...IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25...

Anterwell Technology Ltd.
Guangdong,China

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FGA25N120ANTD TO-3P NPT Trench IGBT 25A 1200V

...IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A a...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module

...IGBT Features • Maximum Junction Temperature : TJ =175℃ • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • Hi...

Anterwell Technology Ltd.
Guangdong,China

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IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail current for switching

Product Overview The IKW30N65ET7 is a low-loss IGBT 7 module featuring Trench and Fieldstop technology. It offers a high collector-emitter voltage of 650 V and a continuous collector current of 30 A. Key advant...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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