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... power station Trench and field-stop technology • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time • High ruggedness per...
...IGBT , Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inver...
...IGBT With SiC Mosfet For Brushless Motors And Lithium Battery Management Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • L...
...IGBT High Frequency Stable 60KHz Multiscene High Current Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • Low collector to ...
...IGBT Multifunctional High Speed For Energy Storage Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar ...
...Circuit Chip IXBH20N360HV Single IGBT Transistors Through Hole Product Description Of IXBH20N360HV IXBH20N360HV IGBTs offer advantages such as high power density, low gate drive requirement, and have an oper...
... Punch Through IGBT for 10-30kHz Switching. Specification Of IXXX140N65B4H1 Part Number: IXXX140N65B4H1 Technology: Si Package / Case: PLUS247-3 Configuration: Single Collector-Emitter Saturation Voltage: 1....
... VCE(sat), and for switching frequency of up to 5kHz. Thin wafer technology and improved processes enable a low gate charge QG, hence, low gate current requirement. ......
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness performance APPLICATIONS • Portable power station • Motor driver Q1....
Transistors IKY140N120CH7XKSA1 IGBT Trench Field Stop TO-247-4 Hard Switching 1200V Product Description Of IKY140N120CH7XKSA1 IKY140N120CH7XKSA1 is Hard-switching 1200 V, 140 A IGBT Transistors with anti-paral...
...IGBT Module for High Voltage and High Frequency Power Distribution in Industries KHG75H12E4L NPT IGBT technology 10μs short circuit capability Low switching losse VCE(sat) with positive temperature coefficie...
.... It features a 1200V blocking voltage rating and a maximum gate emitter voltage of 20V. The module has a short circuit current rating of up to 100A and a maximum collector current of 65A. It also features a...
... circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • VCE (sat) = 2.2 V (typ.) Specifications: part no. MG600J2YS61A Manufacturer M...
..., self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz Remarks • ......