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Igbt Switch Circuit

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Total 23120 products for igbt switch circuit Manufacture & Suppliers

IRG4BC30KDSTRRP IGBT Power Module High Reliability For Power Applications

... Voltage • Low On-State Resistance • High Short Circuit Current Capability • Designed for Low EMI • High Efficiency • Low Thermal Resistance • Low Cost Specifications: • Collector-Emitter ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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Single IGBTs Transistors IKW40N120CH7XKSA1 TO-247-3 IGBT Trench Field Stop 1200V

Single IGBTs Transistors IKW40N120CH7XKSA1 TO-247-3 IGBT Trench Field Stop 1200V Product Description Of IKW40N120CH7XKSA1 IKW40N120CH7XKSA1 is Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-24...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A

... voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Nov...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MIG75J201H - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

... drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. • The electrodes are isolated from case. • VCE (sat) = 2.2 V (typ.) • UL recognized...

Mega Source Elec.Limited
China

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MIG200Q2CSAOX - TOSHIBA – INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT

... Detail: INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT Description: HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATION Applications: Integrates Inverter Power Circuits & Control Circuits in One Pa...

Mega Source Elec.Limited
China

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MIG5Q805H - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

...

Mega Source Elec.Limited
China

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MIG50J101H - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

...

Mega Source Elec.Limited
China

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MIG50J201HC - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

...

Mega Source Elec.Limited
China

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MIG75J101HD - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

... (igbt drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 ...

Mega Source Elec.Limited
China

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MIG100J101HD - TOSHIBA -TOSHIBA Intelligent Power Module Silicon N Channel IGBT

... (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 ...

Mega Source Elec.Limited
China

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MIG100J101HE - TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

... (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 ...

Mega Source Elec.Limited
China

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MIG150Q101H- TOSHIBA - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

...

Mega Source Elec.Limited
China

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N-Channel Enhancement Mode High Power IGBT For Frequency Converter

... Management Features • Positive temperature coefficient • High speed switching • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High r...

Guangdong Lingxun Microelectronics Co., Ltd
Guangdong,China

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Through Hole Integrated Circuit IC Chip TO-220AB STGP14NC60KD GP14NC60KD IGBT 600V 25A 80W

... - Max 80W Switching Energy 82µJ (on), 155µJ (off) Input Type Standard Gate Charge 34.4nC Td (on/off) @ 25°C 22.5ns/116ns ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Through Hole Integrated Circuit IC Chip TO-220AB STGP14NC60KD GP14NC60KD IGBT 600V 25A 80W

... - Max 80W Switching Energy 82µJ (on), 155µJ (off) Input Type Standard Gate Charge 34.4nC Td (on/off) @ 25°C 22.5ns/116ns ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Through Hole PG-TO247-3 Integrated Circuit Components IHW20N120R5 H20MR5 IGBT 1200V 40A 288W

..., Ic 1.75V @ 15V, 20A Power - Max 288W Switching Energy 750µJ (off) Input Type Standard Gate Charge 170nC Td (on/off) @ 25°C -/260ns Test Condition 600V, 20A, ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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IGBT Trench Field Stop 80A FGHL75T65MQDTL4 Transistors TO-247-4 Package

... construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. Specification Of FGHL75T65MQDTL4 Part Number FGHL75T65MQDT...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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ICs Chip IKW15N120CS7XKSA1 IGBT Transistors 1200V 36A 176W Through Hole PG-TO247-3

...IGBT Transistors 1200V 36A 176W Through Hole PG-TO247-3 Product Description Of IKW15N120CS7XKSA1 IKW15N120CS7XKSA1 1200 V/15 A TRENCHSTOP™ IGBT7 S7 single tube for hard switching in a TO-247 package with EC7...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Single IGBTs Transistors Surface Mount IXYA20N120A4HV TO-263-3 IC Chip

...IGBTs Transistors Surface Mount IXYA20N120A4HV TO-263-3 IC Chip Product Description Of IXYA20N120A4HV IXYA20N120A4HV devices feature reduced thermal resistance, low energy losses, fast switching, low tail cu...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FZ900R12KE4 Automotive IGBT Modules 1200V 900A Single Switch IGBT Modules

...Emitter Controlled 4 diode. Specification Of FZ900R12KE4 Part Number: FZ900R12KE4 Product: IGBT Silicon Modules Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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