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...Server Indoor wireless network Telecommunications equipment Features: u Compact structure, power density up to 23.5W/in3 u Output voltage adjustable 43-58Vdc, default 53.5V u Wide working temperature ......
SOT-89 D882 Plastic-Encapsulate Transistors Features Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage...
Triple-Output AMOLED Display Power Supply Integrated Circuit IC Chip The SGM3836A is designed for powering AMOLEDdisplays which require VAVDD, VELVDD and VELVSS. Thedevice integrates two boost converters, VO1 f...
... solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain — 12 dB (14 dB Typ) Efficiency — 50% Applications:...
...Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter, brake power circuits & control circuits (IGBT drive units, p...
... circuits (IGBT drive units, protection units for over−current, under−voltage & over−temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 3.5V (Max.) tof...
...Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter, brake power circuits & control circuits (IGBT drive units, p...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.8 V...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V...
... drive units, protection units for over−current, realtime-current-control (RTC), under−voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) ...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V...
... drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) ...
...circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat)...
...circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat)...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat)= 3.5 V ...
... circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat...