Total 83419 products for isolated power module Manufacture & Suppliers

• IGBT Power Module MG75M2CK1 - TOSHIBA -TOSHIBA IGBT Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1] Enhancement-mode [1] The electrodes are isolated from case. Specifications: part no. ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG75Q1JS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS40 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG75Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS43 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG75Q2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS40 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG75Q2YS42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS42 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG75Q2YS44 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS44 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1AL2-4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1AL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100G2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100H2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100H2DL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100J6ES52 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG100M2YK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS43 Manufacturer TOSHIBA supply ability 1...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150Q1JS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65H Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG150Q1JS65HA - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65HA Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

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