| Sign In | Join Free | My burrillandco.com |
|
...module SEMIKRON 68A 1600V and SK70DT08 SK70DT12 Semikron, SK70DT16, Thyristor Module SCR, 68A 1600V, 13-Pin SEMITOP3 Product Details SK Series 3 phase controlled bridge rectifier Up to 1600V reverse voltage ...
...Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns Features • Double metal process for low gate resi...
... Logic Controller, this input module has 8 isolated input points. Each point has a common power input terminal. There are many input devices that users can operate with this module because of its input chara...
...Module Description: High power switching applications Motor control applications Applications: • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal (TH) Specifications: part ...
...Module Description: High power switching applications Motor control applications Applications: • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal (TH) Specifications: part ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case Specifications: part no. M...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG2...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...
...Module Description: High Power Switching Applications Motor Control Applications Applications: x The electrodes are isolated from case. x Enhancement−mode x Thermal outputterminal (TH) Specifications: part n...
... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50D2DM1 Manufacturer TOSHIBA supply ability 10...