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Isolated Power Module

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Total 83419 products for isolated power module Manufacture & Suppliers

IGBT Power Module MG25H6EM1 - TOSHIBA -TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

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IGBT Power Module MG25J2YS9 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG25J2YS91 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG25J6ES1 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

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IGBT Power Module MG25M2YK9 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG25N1BS1 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case Specifications: part no. M...

Mega Source Elec.Limited
China

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IGBT Power Module MG25N1JS1 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG25N2CK1 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG2...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG25N2YS1- TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG25N2YS40 - TOSHIBA - TOSHIBA IGBT Module Silicon N - Channel IGBT

...Module Silicon N - Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG600Q2YS60A - TOSHIBA - MITSUBISHI IGBT Module

...Module Description: High Power Switching Applications Motor Control Applications Applications: x The electrodes are isolated from case. x Enhancement−mode x Thermal outputterminal (TH) Specifications: part n...

Mega Source Elec.Limited
China

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IGBT Power Module MG50D2DM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50D2DM1 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG50G1BL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G1BL3 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL1 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50G2CL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL2 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50G2CL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL3 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50G2CL4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL4 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50G2DM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2DM1 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50G6EL1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G6EL1 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG50H1BS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50H1BS1 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart

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