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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...
...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...
...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...
...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...
50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...
50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...
...Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R...
...Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R...
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS ...
AP10H06S N Channel Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been de...
AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher ...
AP10H06S N Channel Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been de...
AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher ...
...Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as ...
...Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as ...