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Junction Field Effect Transistor

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Total 13949 products for junction field effect transistor Manufacture & Suppliers

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanch...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF28N06 Field Effect Transistor IC Chip N Channel MOSFET Metal Oxide

.... It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C...

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Guangdong,China

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AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency

...Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency

...Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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TK13A60D TOSHIBA Field Effect Transistor

TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω...

Anterwell Technology Ltd.
Guangdong,China

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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (��-MOSVI) 2SK3561 Switching Regulator Applications �� Low drain-source ON resist...

Anterwell Technology Ltd.
Guangdong,China

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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's prop...

Anterwell Technology Ltd.
Guangdong,China

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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DM...

Anterwell Technology Ltd.
Guangdong,China

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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, ...

Anterwell Technology Ltd.
Guangdong,China

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NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, h...

Anterwell Technology Ltd.
Guangdong,China

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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V AO3400A N - Channel Enhancement Mode Field Effect Transistor General Description Feature The AO3400A uses advanced trench technology to provide exc...

Anterwell Technology Ltd.
Guangdong,China

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SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor

... • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plana...

Anterwell Technology Ltd.
Guangdong,China

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