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... (Tc = 100°C) - 175mΩ Maximum Drain-Source On-State Resistance - Low Gate Charge - Low Input Capacitance - Fast Switching - Lead-Free and RoHS Compliant Application: - Motor Control - Automotive - Switching ...
...MOSFET Features: • 8.0A, 40V RDS(ON) • Low gate charge • Low Crss • Temperature Compensated Current Limit • Fast Switching • Improved Avalanche Ruggedness • Low Leakage Current • Fast Body Diode • RoHS Compl...
... Description: The NTD25P03LT4G is a P-channel Logic Level MOSFET intended for use as a load switch in power management applications. It features a low on-resistance of 4 ohms and fast switching times, making...
...MOSFET Power Electronics High Efficiency Reliability Solution Description: This is a N-Channel MOSFET that is ideal for applications such as motor control, load switching, and DC-DC conversion. It is a high ...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
...MOSFET Power Electronics High Performance Reliability for Your Applications This IRFP460APBF MOSFET is a high-performance, low-cost, power MOSFET. It features a low-threshold voltage and a high-current capab...
SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET P...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
...MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance ...
...MOSFET for Power Electronics Applications Features: • Low Gate Charge Qg • Low Total Gate Charge Qgd • Fast Switching • Excellent On-State R DS(on) • High Avalanche Energy • Easy Paralleling Applications: • ...
... N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switc...
... N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switc...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...