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...Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 2-mm × 2-m...
SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maxim...
...MOSFET Power Electronics FETs High Performance Applications MIC94050YM4-TR N-Channel Enhancement Mode MOSFET Description: The MIC94050YM4-TR is a N-Channel Enhancement Mode MOSFET from Microchip Technology. ...
...Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4104 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SI...
IRF7314TRPBF MOSFET Power Electronics High Efficiency Reliability for All Your Power Needs Features: -High-Side Load Switch -Low On-Resistance: 0.08Ω -High Continuous Drain Current: 28A (Tc = 25°C) -Low Gate Ch...
...MOSFET P-Channel 30V 34A 8SOP Optimize Your Notebook Battery Power and Load Switching with Top Quality DMP34M4SPS-13 If you're looking to boost the performance of your laptop and improve its battery life...
... for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, –30 V RDS(ON) = 50 ...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
...Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET 1 Features Low On-Resistance Low Qg and Qgd Low Threshold Voltage Ultra-Small Footprint (0402 Case Size) – 1.0mm×0.6mm Ultra-Low Profile – 0.35 mm Height In...
...MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • ...
...MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance ...
...MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protectio...
...Load Switch is its center distance between phases, which is ≥2000mm. This feature ensures that the switch can handle high voltage power distribution with ease, making it ideal for use in large-scale power sy...
...Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM ap...
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) ...
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM appl...
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM ap...
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) ...