| Sign In | Join Free | My burrillandco.com |
|
IRF7329PBF Specifications Part Status Not For New Designs FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.2A Rds On (Max) @ I...
ZXMD63P03XTA Specifications Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs ......
SLA5061 Specifications Part Status Active FET Type 3 N and 3 P-Channel (3-Phase Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A, 6A Rds On (Max...
FTCO3V455A1 Specifications Part Status Active FET Type 6 N-Channel (3-Phase Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 150A Rds On (Max) @ Id,...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to...
... of only 7.6nC and an on-resistance of only 35mΩ. The MOSFET is capable of operation at high current levels, up to 10A, making it well-suited for a variety of applications. Features: - Low-voltage operation ...
IRF540NPBF MOSFET Power Electronics High Performance Low Cost Reliable Solution Description: The IRF540NPBF MOSFET is a standard level N-channel MOSFET with a maximum drain-source voltage of 100V and a maximum ...
... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is ...
.... It features N-channel MOSFET technology, with a maximum voltage rating of 100V and a maximum drain current of 30A. It has an on-resistance of 0.0022Ω and a fast switching speed of 5.8ns. This ......
...Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complem...
...Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of...
...Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complem...
...Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of...
...MOSFET and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output...
... high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,...