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Total 100000 products for low power transistor Manufacture & Suppliers

IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur...

Walton Electronics Co., Ltd.
China

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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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MMBT4401 SOT-23 Tip Power Transistors Fast Switching Emitter Base Voltage 6 V

...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) FEATURE Power dissipation MARKING D882=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE, ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

...Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

...Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur...

Walton Electronics Co., Ltd.
China

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Collector Emitter Breakdown Voltage 80V ISC BD680 PNP Darlington Power Transistor for General Purpose Amplifier

...Power Transistor The ISC BD680 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 V, 25 A IGBT discrete with an...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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STGB10NC60KDT4 IGBT Power Transistor 600V 20A 65W N Channel For Motor Drives

STGB10NC60KDT4 STGW30NC60KD STGP19NC60KD STGW80V60DF Insulated Gate Bipolar Transistor Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives Specificat...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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DarliCM GROUPon Bipolar Mosfet Power Transistor TIP142 Amplifier Switching Applications

... in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Featur...

ChongMing Group (HK) Int'l Co., Ltd
China

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TIP105 transistor socket 3 pin , Silicon PNP DarliCM GROUPon Power Transistors

Silicon PNP DarliCM GROUPon Power Transistors DESCRIPTION ·With TO-220C package ·DARLICM GROUPON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS ·For indu...

ChongMing Group (HK) Int'l Co., Ltd
China

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IPD60R180P7SAUMA1 MOSFET Power Electronics High-Power High Efficiency Low-Voltage Transistor

...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • Avalanche Energy Rating of 8mJ • RoHS Compliant • Pb-Free W...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FDMS86540 Mosfet Transistor High Performance Low Power Consumption

...Power MOSFET Features: • 8.0A, 40V RDS(ON) • Low gate charge • Low Crss • Temperature Compensated Current Limit • Fast Switching • Improved Avalanche Ruggedness • Low Leakage Current • Fast Body Diode • RoHS...

Shenzhen Sai Collie Technology Co., Ltd.
China

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CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

... Synchronous Rectifier for Offline and Isolated DC- DC Converters Motor Control 3 Description This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applic...

ChongMing Group (HK) Int'l Co., Ltd
China

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FDMC6679AZ RoHS Compliant Mosfet Power Transistor -30V P Channel Power Trench

...Power Transistor MOSFET -30V P-Channel Power Trench Features Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max r = 18 mΩ at V = -4.5 V, I = -8.5 A DS(on) GS D HBM ESD protection level of 8 kV typical(note...

ChongMing Group (HK) Int'l Co., Ltd
China

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ZTX753 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS audio power mosfet smd power mosfet

... Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and...

ChongMing Group (HK) Int'l Co., Ltd
China

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