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...POWER TRANSISTOR MODULE. Part NO: 6DI15A-050 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands ...
Quick Detail: MHW105 - Motorola, Inc - Hybrid Power Module Description: The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 ...
Quick Detail: MHW807-1 - Motorola, Inc - UHF POWER AMPLIFIERS Description: Designed specifically for mobile cellular radio applications. The MHW807 Series amplifiers are capable of wide power range control, ope...
...POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS. Part NO: MJ300AV100 Brand: MOTOROLA Mounting Type: Screws Date Code: 03+ Quality Warranty: 3 Months Overview We specialize in high power and pow...
...POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famou...
MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping MMBT4403LT1 SOT23 (PbF...
Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM handheld radio. The MHW903, MHW953 and MHW954...
... speaker, subwoofers, subwoofer, woofers, and amplifier, flight case and racks. MT series amplifier features: With perfect sound, high power and fast power supply system and...
BF245B N-Channel Amplifiers switching power mosfet low power mosfet N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. Absolute Maximum Ratings Ta=......
...Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very hig...
T90 PCB 12V 110VAC Micro Middle Power 20A Low Power Control Relay 1.Overview: Product Number: WJ115 T90 Coil Voltage: 3~36VDC Contact Load: 10A/20A/30A 250VAC/28VDC Anti-dust Structure, Single Pole Conv...
T90 PCB 12V 110VAC Micro Middle Power 20A Low Power Control Relay 1.Overview: Product Number: WJ115 T90 Coil Voltage: 3~36VDC Contact Load: 10A/20A/30A 250VAC/28VDC Anti-dust Structure, Single Pole Conv...
Quick Detail: MHW720A1 - Motorola, Inc - UHF Power Amplifiers Description: Capable of wide power rang e control as encountered in UHF cellular telephone applications. MHW720A1 400 440 MHz MHW720A2 440 4...
Quick Detail: MRF141G - Motorola, Inc - N-CHANNEL BROADBAND RF POWER MOSFET Description: Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broa...
SFH6156-2T DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous Drain Current 15 A Maximum ...
SFH6156-2T DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous Drain Current 15 A Maximum ...
Product Overview The ISC 2SC5027 is a Silicon NPN Power Transistor designed for high-speed switching applications. It features a high Collector-Emitter Breakdown Voltage of 800V (Min) and offers minimum ......
Product Overview The ISC BU508AF is a Silicon NPN Power Transistor designed for high-voltage applications. It features a high collector-emitter sustaining voltage of 700V (Min) and high switching speed, ......
Product Overview The ISC 2SD1163 is a Silicon NPN Power Transistor designed for TV horizontal deflection applications. It offers a high Collector Current of 7A and a Collector-Emitter Breakdown Voltage of 120V ...
Product Overview The INCHANGE Semiconductor 2SA1494 is a silicon PNP power transistor designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -200V(Min) an...