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...power transistor designed for demanding applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electr...
..., high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product...
...power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts...
...power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, e...
... switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is Ro...
...power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, e...
... power supplies, and general power amplification. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, while being a RoHS compliant ......
... power transistor designed for audio power amplification. It offers robust performance with specific electrical characteristics and absolute maximum ratings crucial for reliable circuit design. This device i...
Product Overview This power transistor is designed for power amplification, TV sound output, and frame output applications. It is complementary to the C2073. Key features include high voltage ratings and signif...
18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...
... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low ...
18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...
...Power Transistor MOSFET PowerMESH Zener SuperMESH Features Order codes VDS RDS(on) max. PTOT ID STP4NK60Z 600 V 2Ω 70 W 4A STP4NK60ZFP 100% avalanche tested Very low intrinsic capacitances • Zener-protected ...
... Cycle-by-Cycle Current Limit No Control Loop Compensation Required Separate PWM Dimming and Low Power Shutdown Supports All-Ceramic Output Capacitors and Capacitor-less Outputs Thermal Shutdown Protection S...
...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...
Silicon PNP Power Transistors 2SB861 DESCRIPTION ·With TO-220C package ·Complement to type 2SD1138 APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitt...
2SD1047 Silicon NPN Power Transistors DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PIN DESCRIPTION 1 Base 2 Collector;connected to ...
...power transistors 2SC5707 for High Current Switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes. • Large current capaci...
IRF8010PBF MOSFET Power Transistor High Speed Switching for High Power Applications Product Listing: IRF8010PBF MOSFET Features: 100V Drain-Source Breakdown Voltage 100V Maximum Drain-Source Voltage 500mA...
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: 200V Drain-Source Voltage (VDS) 8.9A Continuous Drain Current (ID) at 25C 12.3A Continuous Drain Current (ID) at 10...