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IRFIZ44N MOSFET Power Electronics High Performance High Efficiency Low On Resistance Features: Low On-Resistance High Current Handling Capability Low Gate Charge Fast Switching Low Threshold Voltage S...
Infineon BSC052N08NS5ATMA1 N-Channel MOSFET Features: • Low On-Resistance RDS(on) • Low Gate Charge Qg • Low Forward Voltage VF • Ease of Paralleling • Low Threshold Voltage VGS(th) • Enhanced dv/dt Capability ...
Product Listing: Product: BSC047N08NS3GATMA1 MOSFET Features: • N-Channel Enhancement Mode • Logic Level Gate Drive • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Low Output Capacita...
Product Listing: IPW65R080CFD MOSFET Features: • Low On-Resistance • Low Gate Charge • Low Input and Output Capacitance • Low Leakage Current • Low Threshold Voltage • High Avalanche Energy • Fast Switching Par...
... • Low Thermal Resistance • RoHS Compliant Specifications: • Drain-Source Voltage (Vdss): 60V • Gate-Source Voltage (Vgs): ±20V • ......
...MOSFET designed for high performance power electronics applications. It features a wide range of features such as low on-resistance, high efficiency, and low gate charge for maximum performance. The device i...
2N7002LT1G MOSFET Power Electronics Product Features: Logic Level Gate Enhanced ESD Protection High Speed Switching Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Easy to Assem...
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...
IRF9Z24NSTRLPBF MOSFET Power Electronics High Performance Low On Resistance High Speed Switching Product Listing: IRF9Z24NSTRLPBF MOSFET Product Type: MOSFET Brand: IRF Model: IRF9Z24NSTRLPBF Number of Channels...
... - 100V Drain-Source Breakdown Voltage - RDS(on) = 0.065 Ohms - 175C Operating Temperature - 8.5A Continuous Drain Current - Low Threshold Voltage - Lead Free/RoHS Compliant - Halogen Free Available Upon Req...
...MOSFET transistor: High-Power Capability: The IRFZ34NPBF is a N-Channel MOSFET transistor designed for high-power applications, making it an ideal choice for a variety of switching applications. Low RDS(on):...
IRF7319TRPBF MOSFET High-Power High-Speed Switching for Power Electronics Applications Description: This MOSFET is a N-channel HEXFET Power MOSFET with low gate charge and low on-resistance. Features: Dynami...
IRF7317TRPBF MOSFET Power Electronics High-Performance Low-Power Solution for Optimal Efficiency IRF7317TRPBF - N-Channel MOSFET Product Type: N-Channel MOSFET Package Type: TO-220 Vds Max: 60V Id Max: 32A Rds ...
...MOSFET Power Electronics High Performance Reliable Switching for Your Projects Product Description: IRFH9310TRPBF is a high power N-Channel MOSFET that features low on-resistance, high frequency operation, a...
...MOSFET Power Electronics for Maximum Efficiency Description: This is an N-Channel MOSFET with a drain-source voltage of 200V and a drain current of 38A. It features a low on-resistance of 0.0075 Ω, fast swit...
...MOSFET developed by International Rectifier. 2. It is designed for use in high-current, high-speed switching applications. 3. The MOSFET has an operating voltage range of 20V to 100V and a current rating of ...
.... It is fabricated using advanced MOSFET technology that provides excellent switching performance and low on-resistance. It features a very low gate threshold voltage (Vgs(th)) for ease of driving and fast s...
...MOSFET Power Electronics High Performance Switching and Controlling Solution Product Description: The IRFU9024NPBF is a N-channel enhancement mode power metal-oxide-semiconductor field-effect transistor (MOS...
Product: IRFH5210TRPBF MOSFET Description: This MOSFET is a high-voltage N-channel MOSFET featuring low RDS(on), fast switching, and low gate charge. It is designed to withstand high voltage, high current, and ...
...MOSFET Description: The IRF2804STRLPBF is a N-Channel MOSFET designed for high voltage switching applications. It is specifically designed to minimize the on-state resistance and to reduce switching losses. ...