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IRLML5103TRPBF MOSFET Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface Mount PowerPAK 1212-8 Product Descriptio...
...MOSFET Power Electronics High Performance High Efficiency Switching Description: The IRLML2244TRPBF is a P-channel enhancement mode MOSFET. It is designed to deliver high performance in power management appl...
... voltage of 100V and a maximum drain current of 8A. It has a low on-state resistance and is capable of operating at high switching frequencies. Features: • 100V drain-source breakdown voltage • 8A maximum dr...
IRF540NPBF MOSFET Power Electronics High Performance Low Cost Reliable Solution Description: The IRF540NPBF MOSFET is a standard level N-channel MOSFET with a maximum drain-source voltage of 100V and a maximum ...
... MOSFET is designed for use in a wide range of applications such as DC/DC converters, AC/DC power supplies and actuators. It features a low on-resistance of 0.4 Ω and a very low gate charge of 2.6 nC. Produc...
...a maximum drain-source voltage of 400V with a drain current of 43A. This MOSFET also features a low on-state resistance of 0.0035 Ohms, and a maximum power dissipation of 54W. The IRFS4115TRL7PP is ideal for...
...MOSFET High Performance Power Electronics for High Efficiency and Reliability The IRF7493TRPBF MOSFET is a high-performance, low-voltage power MOSFET designed for use in a wide range of consumer and automoti...
...MOSFET High Performance Power Electronics for High Efficiency and Reliability The IRF7493TRPBF MOSFET is a high-performance, low-voltage power MOSFET designed for use in a wide range of consumer and automoti...
...MOSFET Description: The IRFB4332PBF is a high power MOSFET with a breakdown voltage of 500V and a continuous drain current of 4.5A. It has a fast switching speed and a low on-state resistance. Features: • 50...
...MOSFET Power Electronics Introducing the AO3160 MOSFET Power Electronics - an intelligent, efficient, and reliable power solution for a wide range of applications. This MOSFET transistor device is designed f...
... superior switching performance and low on-state resistance. It is designed to meet the requirements of high power applications such as DC-DC converters, motor controllers and power management systems. The d...
... –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1....
... MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A –20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 FET Type N-...
... –20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuou...
... – Tape & Reel - RoHS Compliant - Halogen Free - Lead Free Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide)...
... Specifications: • Part Number: IPP032N06N3GXKSA1 • Transistor Type: MOSFET • Package Type: Fully Molded Plastic • Pin Count: 3 • Mounting Type: Surface Mount • Maximum Gate Source Voltage (......
...power density, and low on-resistance. With its high efficiency, it is well suited for use in high-power switching applications. Features: • Wide range of operating conditions up to 400V • High power density ...
...MOSFET Power Electronics Product Description: The NVMFS5C468NT1G is a high power MOSFET device designed for power electronics applications. It features a low drain-source on-resistance (RDS(on)) of 4.68mΩ an...
... a low on-state resistance and high-speed switching capabilities, making it ideal for power supplies, motor control, lighting, and portable electronics. Features: - Low on-state resistance - High-speed switc...
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...