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SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(o...
IRF3710ZPBF MOSFET Power Electronics High Performance Low On Resistance Fast Switching Parameters: - N-Channel MOSFET - Maximum Drain Source Voltage: 100V - Drain Source On Resistance: 0.040 Ohm - Gate Threshol...
...device with a low gate charge for high efficiency, low power loss and fast switching. Specifications: - Drain-Source Voltage: 100V - Drain Current: 34A - Gate Threshold Voltage: ......
... applications. This device offers a low on-resistance of 17.2mΩ and a fast switching speed of 20V/ns. The IRFU3910PBF is available in a TO-220 package and is suitable for use in a wide ......
... N-channel MOSFET 7. Fast switching capability 8. High power and current capability. Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade ......
...MOSFET Power Electronics High Performance High Efficiency Power Solutions Product Description: The IR2136STRPBF is an N-Channel enhancement mode MOSFET ideal for high-side switching applications. It is desig...
Product Description: 1. N-Channel MOSFET for high frequency switching applications 2. Low gate charge and fast switching speed 3. Low on-resistance and high current handling capability 4. High Avalanche Energy ...
... of 30A 4. Low RDS(ON) of 0.069 Ohm 5. High-speed switching with a maximum turn-on time of 10ns 6. High-side and low-side switching capability 7. Logic level gate drive 8. AEC-Q101 qualified for automotive a...
...MOSFET Power Electronics High Performance Low-Power Solution Product Parameters: Drain-Source Voltage: 30V Continuous Drain Current: 30A Drain-Source On-Resistance: 0.019 Ohm Maximum Power Dissipation: 4.5W ...
... MOSFET Power Electronics For High-Current Switching Applications Product Description List: • N-Channel, Enhancement-Mode MOSFET • Fully-Featured, Low-RDS(on) Design • High-Current Switching Capability • Fas...
Description: The IRFB3607PBF is a 100V N-Channel MOSFET with a maximum drain current of 75A and a maximum drain-source voltage of 100V. This MOSFET features a low gate threshold voltage, low on-resistance, and ...
...MOSFET Power Electronics High Performance and Durable Solution for Power Applications Vishay SI2301CDS-T1-GE3 N-Channel MOSFET, 30V, 3.2A, 3.2 Ohm, 8-Pin SOT-23 Product Features: - Low-profile package ideal ...
Product Listing: IRFH5304TRPBF MOSFET Features: • N-Channel Enhancement Mode • 100V Drain-Source Voltage • 4.2A Continuous Drain Current • Low RDS(on) • Low Gate Charge • Logic Level Gate • 100% Avalanche Teste...
...resistance, low gate charge, and high power dissipation. It has a drain source voltage of 100 V and a drain current of 8 A. The package type is a TO-220-3. Parameters: • ......
SI5855CDC-T1-E3 MOSFET Power Electronics High Performance Low On Resistance Description: The SI5855CDC-T1-E3 is an N-Channel MOSFET with 58A peak drain current, 56A continuous drain current, 55V drain-source vo...
... other high-power applications. Its features include high blocking voltage with low on-resistance, low gate charge, fast switching, and temperature and avalanche energy rated operation. Parameters: • Drain-S...
...117P MOSFET Product Description: This MOSFET is an advanced high voltage, high speed, and low on-resistance device designed for high performance switching applications. It is built with the latest HEXFET tec...
...MOSFET Power Electronics High Voltage High Current Switching Power Supply Solutions Description: The SI7615ADN-T1-GE3 is a N-Channel MOSFET designed to provide superior performance in a wide range of applica...
Product Name: IRFS7440TRLPBF MOSFET Description: This MOSFET is a high-efficiency, high-performance, low-cost, high-reliability device with a wide range of applications. Parameters: - Drain-Source Voltage: 100V...
IRFZ24NPBF MOSFET High Performance Power Electronics Solution for Your Projects Description: The IRFZ24NPBF is a N-channel power MOSFET with a low threshold voltage and low resistance, providing improved perfor...