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MW6S010GNR1 is a RF Power Field Effect Transistor . Part NO: MW6S010GNR1 Brand: FSL Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High f...
MW6S010N is a RF Power Field Effect Transistor . Part NO: MW6S010N Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High f...
PRF7124GNR1 is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484 . Part NO: PRF7124GNR1 Brand: FREESCALE Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview ......
PTF181301A is a LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz . Part NO: PTF181301A Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: ......
... Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 5 A PC PC Collector power dissipation TC≤25℃ 90 W Tj Junction temperature 150 ℃...
Silicon PNP Power Transistors 2SA940 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute maximum ratings (Ta=25℃) SYMBO...
Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal ......
Silicon NPN Power Transistors 2SD1880 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built in damper diode APPLICATIONS ·......
...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto...
...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto...
...Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-t...
...Power Transistor 2SD1899 The ISC 2SD1899 is a Silicon NPN Power Transistor designed for high transition frequency applications. It features low collector saturation voltage and is 100% avalanche tested, ensu...
...Power Transistor from ISC, designed for high-voltage applications. It features a high breakdown voltage of 900V (V(BR)CBO), high switching speed, and high reliability with minimum lot-to-lot variations. This...
...POWER TRANSISTOR The 3DD4128PL is a high-reliability NPN power transistor designed for applications requiring middling breakdown voltage, high current capability, and fast switching speeds. It is suitable fo...
...Power Transistor with Integrated Diode The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is desig...
Product Overview The MJ15022/15024 are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a TO-3 package, complement to MJ15023/MJ15025, exce...
... voltage and high power dissipation capability of up to 10W (Max) at TC=25. They are engineered for robust device performance and reliable operation with minimum lot-to-lot ......
...Power Transistor designed for high-power audio, disk head positioners, and other linear applications. It is also suitable for power switching circuits such as relay or solenoid drivers, DC-DC converters, and...
IRGP4063DPBF IGW50N60H3 IGP50N60T IKD06N60RA Insulated Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product A...
TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs use the state-of-the-art singl...