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AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable fo...
Silicon NPN Power Transistors 2SD2499 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·......
AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable fo...
TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High Breakdown Voltage MARKING A94=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERI...
TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High DC Current Gain and Large Current Capability MARKING M28S=Device code Solid dot=Green molding compound device, if none,the normal device...
TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE High voltage MARKING A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMA...
TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN) FEATURE General Purpose Switching Application MARKING 2N5551=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank...
TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURE Excellent hFE linearity Low noise Complementary to A733 MARKING C945=Device code Solid dot=Green molding compound device, if none,the no...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
...Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A • Vgs(th...
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • ......
NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 ...
Silicon PNP Power Transistors 2SB861 DESCRIPTION ·With TO-220C package ·Complement to type 2SD1138 APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitt...
2SD1047 Silicon NPN Power Transistors DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PIN DESCRIPTION 1 Base 2 Collector;connected to ...
MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120150 VOLTS, 50 WATTS Features DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc CollectorEmitter...
...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...