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... for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in lig...
... Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems •...
HJ44H11 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers o...
Alternistor Triacs (6 A to 40 A) General Description Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors...
...Mosfet Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers Logic-Level Gate Drive Ultra Low On-Resistance Surf...
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM ap...
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) ...
FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Fast swit...
...MOSFET Description General Description: The 9435A is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up ...
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate C...
-30V/-50A Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches whic...
...Mosfet Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen F...
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resis...
IRFP064NPBF Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube Technical Specifications : Tab Tab Package Width 5.31(Max) Package Height 20.7(Max) Package Length 15.87(Max) PCB changed 3 Lead Shape Through H...
... 12A 10mr transistor mosfet alternative for AP6982GN2-HF Description: AP6982 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fas...
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resist...
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM appl...
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM ap...
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) ...
FGH40N60SMDF 600V, 40A Field Stop IGBT Features Maximum Junction Temperature : TJ =175 Positive Temperaure Co-efficient for easy parallel operating High current capability Low saturation voltage: VCE(s...