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...-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high s...
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the sy...
AOD482/AOI482 100V N-Channel MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for bo...
...Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excelle...
... modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important....
...MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the pro...
... modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important....
...MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the pro...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
...-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high s...
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the sy...
AOD482/AOI482 100V N-Channel MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for bo...
...Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excelle...
MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Conti...
...-SLOT PC CARD POWER INTERFACE SWITCH switching power mosfet ►Fully Integrated VCC and Vpp Switching for Single-Slot PC Card Interface ►Low rDS(on) (70-mΩ 5-V VCC Switch and 3.3-V VCC Switch) ►Compatible Wit...
... internal high-side high voltage power MOSFET switching regulator Description The MP2451 is a high frequency (2MHz) stepdown switching regulator with integrated internal high-side high voltage power MOSFET. ...
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
...MOSFET with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density andamp; Industrial-Grade Reliability andnbsp; Features Advanced Process Technology Ultra Low...
...MOSFET Pair with 50mandOmega; RDS(on) Fast Switching Low Gate Charge SOIC-8 Package ESD Protected andamp; Ideal for DC-DC/Synchronous Rectification andnbsp; Features Generation V Technology Ultra Low On-Resi...