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...MOSFET High Performance Power Electronics for High Efficiency and Reliability The IRF7493TRPBF MOSFET is a high-performance, low-voltage power MOSFET designed for use in a wide range of consumer and automoti...
...MOSFET High Performance Power Electronics for High Efficiency and Reliability The IRF7493TRPBF MOSFET is a high-performance, low-voltage power MOSFET designed for use in a wide range of consumer and automoti...
...MOSFET High Efficiency High Performance for Heavy Duty Applications Product Description: The IRF9530NPBF is a N-channel MOSFET, designed for use in high voltage switching applications, including DC-DC conver...
... load switch. It features low gate charge, low on-resistance, and fast switching speed. The MOSFET is also RoHS compliant and halogen free. Features • Low gate charge • Low on resistance • Fast switching spe...
...MOSFET Description: The IRFB4332PBF is a high power MOSFET with a breakdown voltage of 500V and a continuous drain current of 4.5A. It has a fast switching speed and a low on-state resistance. Features: • 50...
...MOSFET Power Electronics High Frequency Switching and Low On Resistance for Improved Efficiency Product Name: IRFS7530TRLPBF Product Description: This is an N-channel Power MOSFET produced by International R...
...MOSFET Power Electronics Product Description: The Fairchild FDN352AP N-Channel MOSFET Power Electronics is an advanced power MOSFET that features an improved gate charge and an enhanced RDS(ON) for higher ef...
...applications requiring efficient switching and thermal performance. Product Overview The Infineon IRF7342TRPBF is an N-channel enhancement-mode MOSFET utilizing advanced trench gate technology. Designed for ...
...state resistance. It is suitable for applications such as high-speed switching, motor control, switching power supplies, and other power management applications. Product Features: • Maximum Drain Source Volt...
..., low on-resistance and high power handling capability. This device is ideal for switching applications, including motor control and power conversion. Product Specifications: • Drain-Source Voltage (Vdss): 1...
...MOSFET Power Electronics High Performance High Reliability Switching Solution The IRF1010EPBF is a high-density MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum drain current of ...
...MOSFET High-Performance Power Electronics for Automotive and Industrial Applications Description: The IRFR6215TRPBF is an N-channel power MOSFET with a fast switching speed, low on-resistance and low gate ch...
IRF8736TRPBF MOSFET Power Electronics For High-Current Switching Applications Product Description List: • N-Channel, Enhancement-Mode MOSFET • Fully-Featured, Low-RDS(on) Design • High-Current Switching Capabil...
...h excellent switching characteristics. It is ideal for power management and switching applications. Parameters: - Operating Voltage: 20V - Drain-Source Voltage: 20V - Gate-Source Voltage: ±20V - Continuous D...
IRF730PBF MOSFET Power Electronics High Power Switching at Low Losses Description: The IRF730PBF is a fast switching N-channel power MOSFET designed for high-speed switching applications. It features low gate c...
...MOSFET Power Electronics High-Performance High-Reliability Switching Solution Product Features: • N-channel MOSFET • 117A Continuous Drain Current at 25°C • 600V Drain-Source Breakdown Voltage • 4.5Ohms Maxi...
...MOSFET Product Description: The IRF7413TRPBF is a single N-channel MOSFET that provides superior switching performance and low on-resistance. It features an optimized cell layout for high density application...
... of 1.2 mΩ. Its low gate charge and fast switching speed make it ideal for high-current and high-frequency applications. Features: • Low RDS(on): 1.2 mΩ • Low gate charge • High-frequency switching • Maximum...
... and a maximum drain current of 8A. It is designed for use in a variety of applications such as switching, power management, low-side switching, and logic level translation. Features: • Maximum drain-source ...
...resistance, low input capacitance, and a fast switching speed. Features: • Low On-Resistance: RDS(on)=3.3mΩ (VGS= -2.5V) • Low Input Capacitance: Ciss=125pF (VGS= -2.5V) • Fast Switching Speed: tON=5ns (VGS=...