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... Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred fo...
...MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead-Free Description Fi...
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Descripti...
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Descripti...
...MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for level-shifted high-side switching and various other applications. Key features include N-channe...
...MOSFET The BSS84(ES) is a P-Channel enhancement mode MOSFET utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuit...
...synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, low threshold ...
...% EAS guaranteed with full functional reliability approval. Product Attributes Brand: HS-Semi Product Type: N-Ch Fast Switching MOSFETs Certifications: RoHS,...
JCS630A N-CHANNEL MOSFET The JCS630A is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS power applications. It features low gate c...
N-CHANNEL MOSFET JCS5N50T The JCS5N50T is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate cha...
...MOSFET The JCS160N08I is an N-channel enhancement mode MOSFET designed for high-power applications. It features low gate charge, low Rdson (typical 4.3m), fast switching speeds, and improved dv/dt capability...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
... circuits, offering features like fast switching, high-density cell design, and a reliable, rugged construction. This device is avalanche rated and has low leakage current.Product Attributes ......
...MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is designed for hig...
...HSK0008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switc...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFETâ„¢ F6 technology with a new trench gate structure. ...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFETâ„¢ F6 technology with a new trench gate structure. ...
JY21L High and Low side driver, high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. General Description The product is a high voltage, high speed power MOSFET and IGBT driver bas...
...MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features comb...