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...MOSFET Transistor Product Description Of BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 is OptiMOS™ 25V MOSFETs transistors available in half-bridge configuration (power stage 5x6). Specification Of BSZ060NE2LSATMA1 Par...
... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for ......
Quick Detail: HEXFET Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extreme...
...Mosfet IC IRF1404PBF Advanced Ultra Low On-Resistance Description Seventh Generation HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi...
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient ...
...Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche R...
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient ...
...Mosfet IC IRF1404PBF Advanced Ultra Low On-Resistance Description Seventh Generation HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi...
... Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast s...
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devic...
... MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (<1.1mm) • Available in Tape & Reel • Fast Switching Description Fifth Generation HEXFETs from International Rectifier ......
... Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient ......
...drivers capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the high side to switch to the offset voltage in a bootstrap operation. Specif...
... 16-SSIP Power Driver IGBT Module 650V H Bridge Automotive IGBT Modules NXV65HR82DZ1 16-SSIP Power Driver Module 650V H-Bridge Product Description Of NXV65HR82DZ1 NXV65HR82DZ1 is H-Bridge MOSFET Automotive ...
High Current Lead Mounted Rectifiers Features Current Capacity Comparable to Chassis Mounted Rectifiers Very High Surge Capacity Insulated Case PbFree Packages are Available* Mechanical Characteristics...
...Bridge Motor Driver 24-Pin HTSSOP EP Tube DRV8834PWP Integrated Circuits Description : The DRV8834 provides a flexible motor driver solution for toys, printers, cameras, and other mechatronic applications. T...
...Bridge Motor Driver 24-Pin HTSSOP EP Tube DRV8834PWP Integrated Circuits Description : The DRV8834 provides a flexible motor driver solution for toys, printers, cameras, and other mechatronic applications. T...
...-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized ......