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Features Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficien...
Features Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficien...
..., Control and Power Stage Output Configuration Half Bridge (4) Interface Parallel Technology Power MOSFET Applications Battery Powered Current - Output 1.5A Voltage - Supply 2 V ~ 7 V Voltage - Load 0 V ~ 11...
STOCK LIST RA45H4452M 250 MITSUBISH 11+ MODULE YMF719E-S 100 YAMAHA 09+ TQFP MAX3232CSE 10000 MAXIM 16+ SOP MC145428P 7634 MOT 16+ DIP R1127NC32P 600 WESTCODE 13+ MODULE CM600HG-130H 203 MITSUBI 15+ MODULE LMG7...
ES1B-E3-61T Surface Mount Ultrafast Plastic Rectifier Features Low profile package Ideal for automated placement Glass passivated chip junction Ultrafast recovery times for high efficiency Low forward...
... DRIVER 8V-18V Power MOSFET Parallel PG-TO263-7 Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power Stage Output Configuration Half Bridge Interface Parallel Technology Power...
... in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=......
... and electric vehicles.The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Product Attributes Product Status Active FET Type 6 N-Channel (3-...
... Of FS03MR12A6MA1LB Part Number: FS03MR12A6MA1B Series: HybridPACK™ Technology: Silicon Carbide (SiC) Configuration: 6 N-Channel (3-Phase Bridge) Drain To Source Voltage (Vdss): 1200V (1.2kV) Current - Conti...
...-applied Thermal Interface Material. Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous ...
IGBT Modules FF8MR12W2M1PB11BPSA1 Automotive IGBT Modules 1200V CoolSiC MOSFET Product Description Of FF8MR12W2M1PB11BPSA1 FF8MR12W2M1PB11BPSA1 is half bridge 1200V, 8m CoolSiC MOSFET module, combined with...
...™ MOSFET, NTC, and PressFIT Contact Technology. Specification Of F415MR12W2M1B76BOMA1 Part Number F415MR12W2M1B76BOMA1 Technology Silicon Carbide (SiC) Configuration 4 N-Channel (Half Bridge) Drain to Sourc...
IRS2101STRPBF Semiconductor IC Chip MOSFET Driver High Current High Speed Low On Resistance Product Listing: IRS2101STRPBF, Semiconductor IC Chip Description: The IRS2101STRPBF is a high voltage, high speed, fu...
... gate driver IC designed to drive one N-channel MOSFET or IGBT in a half-bridge configuration. It contains an undervoltage lockout feature, logic level inputs, a programmable dead-time, and a low-side pre-dr...
...MOSFETs Transistors Product Description Of IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase-shif...
... IGBT Modules MSCSM120HM31CTBL2NG N-Channel Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power modu...
... DRIVER 8V-18V Power MOSFET Parallel PG-TO263-7 Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power Stage Output Configuration Half Bridge Interface Parallel Technology Power...
... output channels, both high and low side referenced, ensuring optimal control. With built-in dead time and shoot-through protection, it safeguards the half-bridge, preventing any potential damage. The...
Product Description: Silicon Carbide SBD (also known as Silicon Carbide Schottky Rectifier Diode or Silicon Carbide Schottky Diode) is a power discrete device made of Silicon Carbide material. It features an ex...
.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr...