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...MOSFETs Transistors Product Description Of IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase-shif...
...MOSFET - High-Performance Power Transistor The IRFB7434PBF MOSFET is a high-performance power transistor designed for efficient power management solutions. It has a low on-resistance of 2.6 mΩ, making it ide...
... Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Description 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 pa...
Single N-Channel Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET Power, Single N-Channel Transistors. Specif...
...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gat...
...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gat...
...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high level...
...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high level...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) ...
MOSFET Transistors NTMFS4C05NT1G MOS Single Transistors NTMFS4C05 DFN5 Product Description NTMFS4C05NT1G is Surface Mount N-Channel Transistors. The maximum gate charge at different Vgs is 14 nC @ 4.5 V, Curren...
IC Chip PG-HSOG-8-1 Package IAUTN06S5N008G Single FETs MOSFETs Transistors Product Description Of IAUTN06S5N008G IAUTN06S5N008G is Discrete Semiconductor Products 60 V Transistors,the package is PG-HSOG-8-1. Sp...
1 N-Channel MSC060SMA070B4 700V Silicon Carbide Transistors TO-247-4 Power MOSFET Product Description Of MSC060SMA070B4 MSC060SMA070B4 is a 700 V, 60 m Silicon Carbide N-Channel Power MOSFET Transistors in a ...
N-Channel IMBG120R220M1H 1200V Silicon Carbide Trench TO-263-8 MOSFET Transistors Product Description Of IMBG120R220M1H IMBG120R220M1H is N-Channel 1200V CoolSiC Silicon Carbide Trench MOSFET Transistors with...
N-Channel IMBG65R260M1H Silicon Carbide Single FETs MOSFETs Transistors TO-263-8 Product Description Of IMBG65R260M1H IMBG65R260M1H is 650V N-Channel MOSFETs Transistors, enables the simplified and cost effect...
SAK-TC264D-40F200W BC Original Imported Integrated Circuit component Electronic Chip SAK-TC264D-40F200W BC Original integrated circuit : (Electronic Components)Integrated Circuits TQFP144 40F200W SAK-TC264D-40F...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
...be used as a critical component of a life support system or other similar systems. APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this a...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
...be used as a critical component of a life support system or other similar systems. APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this a...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ratin...