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...N-Channel MOSFET transistors designed for high-efficiency power switching applications. These devices are optimized for boost PFC topologies, LCD & PD adaptors, and LED lighting. Key features include low dra...
...low drain-source on-resistance (RDS(on) = 0.50 typ.) and easy gate control for switching. They are ideal for use as boost PFC switches and in single-ended flyback or two-transistor forward topologies. Common...
... Overview The DMX1072/DMS1072 are depletion-mode (normally-on) power MOSFETs from ARK Microelectronics, utilizing proprietary advanced planar technology and a rugged polysilicon gate cell structure. These de...
Product Overview The DMZ6005E is a Depletion-Mode Power MOSFET from ARK Microelectronics, featuring an advanced planar technology and a rugged polysilicon gate cell structure. It offers ESD improved capability,...
...enhancement mode MOSFETs, including models ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, and ASB65R120EFD, are designed for high-performance power applications. They feature low drain-source on-resistance (RDS(O...
Product Overview The Ascend Semiconductor ASDM60N50KQ is a 60V N-Channel MOSFET designed for high-performance applications. It features low gate charge, low Ciss, and fast switching capabilities, making it idea...
... MOSFET transistors designed for high-efficiency power conversion applications. These devices are optimized for Boost PFC topologies, power adapters, LCD & PD applications, and LED lighting. Key features inc...
Product Overview The FTZ50P01G5 is a 20V P-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features a proprietary advanced planar technology, a rugged polysilicon gate cell structure, and...
... is a Silicon N-Channel MOS Power MOSFET designed for single-ended flyback or two-transistor forward topologies. It offers a low drain-source on-resistance of 230m (typ.) and is easy to control with a gate s...
.... It features ESD improved capability, a proprietary advanced planar technology, and a rugged polysilicon gate cell structure. This device is suitable for use in audio amplifiers, start-up circuits, protecti...
..., ASU65R850, and ASD65R850E are N-Channel Silicon MOSFETs designed for high-efficiency power conversion applications. These devices offer a low drain-source on-resistance (RDS(on)) and are easy to control vi...
..., AUB050N055, and AUP060N055 are N-Channel Silicon MOSFETs designed for high-efficiency power conversion applications. These enhancement-mode devices feature low drain-source on-resistance and easy gate cont...
... ASE70R950E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 0.870 typ.) and are easy to con...
...(on)) at various gate-source voltages, including VGS=4.5V and VGS=10V, with typical values of 8 m at VGS=10V and 12-18 m at VGS=4.5V. This ......
...ASA80R750E, ASD80R750E, and ASB80R750E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance and easy gate switching con...
..., LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of 0.211 (typ.) and easy gate switching control, operating in enhancement mode with a threshold voltage (Vth) of 2.8 t...
...MOSFETs designed for applications requiring efficient switching. These enhancement-mode devices offer low drain-source on-resistance and are suitable for single-ended flyback or two-transistor forward topolo...
...easy gate control, making them suitable for boost PFC switch, single-ended flyback, PC power, PD adaptors, LCD & PDP ......
...MOSFETs designed for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters. These devices feature a low drain-source on-resistance of 80m (typ.) and...
Product Overview The BMB65N100UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design fa...