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...ASD80R750E, and ASB80R750E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 620m typ.) and easy gate con...
...650V N-Channel Silicon Carbide Power MOSFETs designed for high-performance power electronics applications. These devices offer a low drain-source on-resistance of 30m (typ.) and are easy to control with a ga...
...ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for high-efficiency power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy ga...
Product Overview The BMD70N360E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced Super Junction technology to achieve exceptionally low on-resistance and gate charge. This device fac...
...ASA60R330E, ASD60R330E, and ASM60R330E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These devices feature low drain-source on-resistance (RDS(on)) for easy gate control and ...
Product Overview The AUB033N08BG, AUP033N08BG, and AUW033N08BG are N-Channel MOSFETs designed for synchronous rectification and hard switching applications in DC/DC converters. They are suitable for high-speed ...
Product Overview The Bestirpower BCZ120N40M2 is a 1200 V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high switching speed with low gate charge, a fast intri...
Product Overview The BDP3HV2LI is an AC-to-DC full-bridge rectifier driver chip featuring integrated 20V rated high-voltage N-channel and P-channel MOSFETs. It offers a low typical on-resistance for NMOS (45 m ...
... reliable and rugged performance with low on-state resistance (RDS(ON)) at various gate-source voltages. This device is available in lead-free and green (RoHS compliant and halogen-free) options, ensuring en...
...MOSFET utilizing advanced double trench II technology. This technology significantly reduces conduction loss, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery M...
... is a 600V N-Channel Depletion-Mode Power MOSFET from ARK Microelectronics Co., Ltd. It features a depletion mode (normally on) operation, proprietary advanced planar technology, and a rugged polysilicon gat...
Product Overview The DMB16C20A is a 200V N-Channel Depletion-Mode Power MOSFET from ARK Microelectronics. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offe...
Product Overview The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power swit...
..., are free from secondary breakdown, and utilize a proprietary advanced planar technology with a rugged polysilicon gate cell structure. They offer improved ESD capability, high input impedance, and are suit...
...DMD6014E is a 600V N-Channel Depletion-Mode Power MOSFET featuring ESD improved capability, a normally-on characteristic, and proprietary advanced planar technology. It offers a rugged polysilicon gate cell ...
Product Overview The ASDM100N34KQ is a 100V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It features Advanced Trench Technology, offering excellent RDS(ON) and low gate charge for efficient performance....
Product Overview The ARK Microelectronics DMX1072/DMS1072 are depletion-mode (normally-on) power MOSFETs utilizing proprietary advanced planar technology with a rugged polysilicon gate cell structure. These dev...
Product Overview The AKF30N10S is a 30V N-Channel Enhancement Mode MOSFET from ARK Microelectronics. It features low RDS(ON), low gate charge, and advanced high cell density trench technology. This RoHS complia...
Product Overview The DMZ12C15A is a 150V Depletion-Mode Power MOSFET from ARK Microelectronics. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering fast ...
Product Overview The FTZ20N01G5 is a 20V N-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure,...