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FDBL86361-F085 MOSFET Electronics N-Channel 80 V 300 A 1.4 m Primary Switch for 12 V Systems Package 8-HPSOF N-Channel PowerTrench P-Channel QFET® MOSFET -60 V, -12 A, 135 Technology MOSFET (Metal Oxide) Drain ...
... switching characteristics. It is designed for use in high current switching applications. This MOSFET has a maximum drain-source voltage of 30V and a maximum drain current of 75A. It also has a breakdown vo...
...MOSFET Power Electronics Product Description: This MOSFET power electronics component is specifically designed for high-performance applications, providing efficient and reliable power control. The IRFL014NT...
...MOSFET Power Electronics Product Description: The IRFS7534TRLPBF is a 100V N-Channel MOSFET with a low RDS(on) for high efficiency power switching applications. This device offers both superior performance a...
... high power switching, motor control, and other power electronics applications. This device features a low on-resistance of 0.058 Ω, ultra-low gate charge, fast switching speed, and a wide range of operating...
...MOSFET Power Electronics This International Rectifier IPD053N06NATMA1 is a N-channel Power MOSFET with a maximum drain source voltage of 30 V and a drain current of 53 A. It features an RDS(on) of 0.045 Ω, a...
.... It features a low gate-to-drain charge, low gate-to-source charge, and a fast turn-on time. The FDN308P is ideal for fast switching and...
... a low on-state resistance and high-speed switching capabilities, making it ideal for power supplies, motor control, lighting, and portable electronics. Features: - Low on-state resistance - High-speed switc...
IRFR220NTRPBF Mosfet In Power Electronics High Performance Reliable Switching IRFR220NTRPBF MOSFET N-Channel Power MOSFET Product Parameters: • Drain-Source Voltage (Vdss): 100V • Continuous Drain Current (Id):...
SI4435DY P-Channel 30V 8.8A 2.5W Surface Mount Power management MOSFET 4435 MSL level 1 Datasheet Applications: · Power management · Load switch · Battery protection List Of Other Electronic Components In Stock...
...MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint (3 x 3 mm) • Pb−Free ...
SI4435DY P-Channel 30V 8.8A 2.5W Surface Mount Power management MOSFET 4435 MSL level 1 Datasheet Applications: · Power management · Load switch · Battery protection List Of Other Electronic Components In Stock...
MJD122G Complementary Darlington Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Ap...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
...Channel 1.8V Specified PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching spe...
... • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...
Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit...
...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltag...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...