| Sign In | Join Free | My burrillandco.com |
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...Mosfet Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used ...
...Switch IC for USB application. Low switch-on resistance and low supply current are realized in this IC. RT9742FGJ5 integrates an over-current protection circuit, a short fold back circuit, a thermal ......
...Switch 14SOIC Load Drivers IC 90mΩ Product Description Of BTS5090-2EKA BTS5090-2EKA is a 90 mΩ dual channel Smart High-Side Power Switch, embedded in a PG-DSO-14-40 EP, Exposed Pad package, providing protec...
...-circuits are likely to be encountered. The device includes an integrated 55 mW (DFN package), P-channel MOSFET. The device limits the output current to a desired level by switching into a constant-current r...
... Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred fo...
...MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead-Free Description Fi...
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Descripti...
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Descripti...
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
...on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in high current load applications. FEATURES ● ‐40V/‐70A, RDS(ON) ≤10mΩ@VGS=‐1...
...Switch IC P-Channel 2:1 Automatic Switching Between DC Sources PRODUCT DESCRIPTION The LTC®4412 controls an external P-channel MOSFET to create a near ideal diode function for power switchover or load sharin...
...switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic c...
...channel MOS-FET switching power mosfet > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
Product Description: 1. High current carrying capacity with low on-resistance. 2. Low gate charge for fast switching. 3. Low input capacitance and gate resistance for high frequency operation. 4. RoHS Compliant...
...MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching ...