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...MOSFET • High Efficiency at Light Loads with Pulse Skipping Eco-mode™ • Low Dropout at Light Loads with Integrated BOOT Recharge FET • 146-μA Operating Quiescent Current • 2-μA Shutdown Current • 100-kHz to ...
...on‐resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other a...
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extreme...
... techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides ...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combine...
... MOSFETs Description: The IRFB7430PBF is a 100V, single N-channel HEXFET power MOSFET designed for use in high-performance applications such as power supplies, motor drives, and DC-DC converters. It features...
SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(o...
... N-channel MOSFET 7. Fast switching capability 8. High power and current capability. Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic ......
Product Listing: IRF3205PBF MOSFET Parameters: Drain-Source Voltage: 55V Drain Current: 27A Continuous Drain Current: 27A Power Dissipation: 28W Gate-Source Voltage: 20V Operating Temperature: -55...
IRF1312PBF MOSFET Power Electronics High-Performance High-Reliability Solution for Your Applications Description: This is an advanced power MOSFET designed for use in a wide variety of switching applications. P...
... MOSFET High Performance Power Electronics Device for Maximum Efficiency Features: • 100V N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Output Capacitance • High Avalanche Energy • ...
...: The IRFB3607PBF is a 100V N-Channel MOSFET with a maximum drain current of 75A and a maximum drain-source voltage of 100V. This MOSFET features a low gate threshold voltage, low on-resistance, and fast swi...
...MOSFET Power Electronics High Performance and Durable Solution for Power Applications Vishay SI2301CDS-T1-GE3 N-Channel MOSFET, 30V, 3.2A, 3.2 Ohm, 8-Pin SOT-23 Product Features: - Low-profile package ideal ...
Product: IRF2804PBF MOSFET Parameters: - Drain to Source Voltage (Vds): 500V - Drain Current (Id): 4.4A - Gate to Source Voltage (Vgs): +/- 20V - Drain to Gate Voltage (Vdg): 500V - Power Dissipation (Pd): 20W ...
... drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, power switching and voltage regulation. Parameters: - Peak Drai...
... High-Power MOSFET for Power Electronics Applications Product Description: The IRFP4229PBF N-Channel Power MOSFET is a rugged device designed to efficiently handle high-power applications. It features excell...
Product Listing: IRLR3114ZTRPBF MOSFET Parameters: Drain-Source Voltage (Vdss): 30V Gate-Source Voltage (Vgs): 20V Drain Current (Id): 5.4A (Tc=25C) Continuous Drain Current (Id): 4.4A (Tc=100C) RD...
...MOSFET Power Electronics High Performance High Reliability Solution for Your Needs The SI9407BDY-T1-GE3 is a N-Channel MOSFET designed to provide low on-resistance and wide voltage range performance. This de...
SI3443CDV-T1-GE3 MOSFET Features: - Low on-resistance - Low gate charge - Low input capacitance - High speed switching - RoHS Compliant Parameters: - Product Type: MOSFET - Configuration: Single - Drain-Source ...
Product Listing: Product: IRF4104PBF Power MOSFET Package: TO-220AB VDS (Vdss): 100V VGS (Vgss): 20V RDS(on) (Idss): 3.5 Ohm ID (Continuous Drain Current): 34A Pd (Dissipation): 110 W Qg (Total Gate Charge): 30...