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IPB048N15N5ATMA1 MOSFET Power Electronics PG-TO263-3-2 Package N-Channel Power-Transistor 150V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain ...
IPD053N08N3GATMA1 MOSFET Power Electronics N-Channel OptiMOS® 3 Power-Transistor Package PG-TO252-3 ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Dra...
BSC030P03NS3GAUMA1 MOSFET Power Electronics P-Channel OptiMOST' P3 Power-Transistor FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C ...
SPW47N60C3FKSA1 MOSFET Power Electronics PG-TO247-3-1 Package Power Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 47A ...
IPD050N10N5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 100V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
... Power Dissipation: 2.1W - Operating Temperature: -55°C to 175°C Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of ......
...MOSFET Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ ...
...MOSFET Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @...
...MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Contin...
...MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drain (Id) @ 2...
...MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuo...
...MOSFET Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain ...
...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host...
...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host...
...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as...
...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as...