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Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions...
...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast swi...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast swi...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are l...
...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are l...
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ......
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ......
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electro...
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electro...
...POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free St...
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitabl...
Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. ...
Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. ...
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate ......
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate ......
...MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid...
...MOSFET Power Electronics High Performanc Fast Switching Low Loss Power Conversion Product Listing: Product Name: IRLB3813PBF MOSFET Transistor Description: The IRLB3813PBF is a N-Channel Power MOSFET transis...
BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (...