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...Power Transistors Product Overview The Nexperia BCP56 series comprises NPN medium power transistors designed for surface-mount applications. These transistors are housed in a SOT223 (SC-73) plastic package a...
...: N-Channel • Power Dissipation (Max): 16.5 W • Transistor Case Style: TO-220AB • Continuous Drain Current (Id): 11 A • No. of Pins: 3 • Operating Temperature Range: -55°C to 175°C • Mounting ......
Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically des...
Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching app...
Silicon PNP Power Transistors 2SB668 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power amplifier and switching applications Absolute maximum ratings(Ta=25℃) SYMB...
Silicon NPN Power Transistors 2SC2073 DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute maximum ratings (Ta=25℃) SYMBO...
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega S...
MW6S004 is a RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET . Part NO: MW6S004 Brand: FSL Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electro...
Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal ......
Silicon NPN Power Transistors 2SD1880 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built in damper diode APPLICATIONS ·......
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable f...
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable f...
.... This N-channel power transistor can withstand up to 600V, with a current capacity of 50A, making it an ideal choice for demanding projects that require high-performance components. Designed with a TO-247 p...
... SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power am...
QX5252F high current power mosfet general purpose mosfet power mosfet ic...