| Sign In | Join Free | My burrillandco.com |
|
...-Source Voltage: -20V - Gate-Source Voltage: -6V - Drain Current (continuous): -2A - Drain Current (pulsed): -5A - Power Dissipation: 1.5W Operating Temperature Range: -55°C to +150°C...
IRF9317TRPBF MOSFET Power Electronics: High Efficiency Low Loss High-Speed Switching Description: The IRF9317TRPBF is a 100V N-Channel Power MOSFET designed to provide high performance in a small packages. This...
...MOSFET Power Electronics SC-75 High Performance Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 154mA (Tj) Dri...
...MOSFET Power Electronics P-Channel -5.2 A -30 V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5...
...MOSFET Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 15...
FDPF18N20FT MOSFET Power Electronics High Performance Switching Low On-Resistance and High Temperature Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250 V Current...
Product Name: NTBGS004N10G MOSFET Power Electronics Description: The NTBGS004N10G is a high-speed power MOSFET designed for switching applications. It features a low on-resistance and low gate charge, allowing ...
MOSFET Power Electronics MMBF170 High-Performance Low-Voltage Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Dr...
...MOSFET Power Electronics N-Channel Surface Mount D2PAK FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (M...
IRFU210PBF MOSFET Power Electronics High Performance Low Cost Switching Solution Description: The IRFU210PBF is a high-performance N-Channel MOSFET designed for use in power applications. It features a low gate...
... @ 100µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V Power - Max 21W Operating Temperature -55°C...
...MOSFET Power Electronics N-Channel 500 V D²PAK TO-263 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max...
NTJS4151PT1G 6-TSSOP MOSFET Power Electronics Power Single P-Channel Trench SC-88 -20 V -4.2 A FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (...
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed...
...Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers...
...Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and s...
Original and new Transistor SOT-89 ZVN4525ZTA MOS tube Products Description: 1.This 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capabi...
...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and rug...
...Power Transistor Description: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective cap...
IRF3710ZPBF MOSFET Power Electronics High Performance Low On Resistance Fast Switching Parameters: - N-Channel MOSFET - Maximum Drain Source Voltage: 100V - Drain Source On Resistance: 0.040 Ohm - Gate Threshol...