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... designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a varie...
...Power MOSFET 55V 98A TO-220 MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico...
Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a ...
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: 200V Drain-Source Voltage (VDS) 8.9A Continuous Drain Current (ID) at 25C 12.3A Continuous Drain Current (ID) at 10...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A •...
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Chan...
IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance ......
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...
... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed...
...MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple D...
...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling ...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...