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Mosfet Power Transistor

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Total 24363 products for mosfet power transistor Manufacture & Suppliers

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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IRFP4227 N Channel Mosfet Power Transistor TO -247AC IRFP4227PBF

IRFP4227 200V 65A N CHANNEL MOSFET TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating t...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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FDPF44N25T 250V 44A TO-220FP Tube Mosfet Power Transistor

...MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to re...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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FDPF44N25T 250V 44A TO-220FP Tube Mosfet Power Transistor

...MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to re...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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200V 43A 3.8W 300W Mosfet Power Transistor IRFB38N20DPBF N- Channel SMPS MOSFET

IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduc...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC

IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175��C Operating Temperature l Fast Switching ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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200V 43A 3.8W 300W Mosfet Power Transistor IRFB38N20DPBF N- Channel SMPS MOSFET

IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduc...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC

IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175��C Operating Temperature l Fast Switching ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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8205 Mosfet Power Transistor TSSOP-8 Plastic Encapsulate For Power Management

...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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8205 Mosfet Power Transistor TSSOP-8 Plastic Encapsulate For Power Management

...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A

...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MRFE6VP5300NR1 Mosfet Power Transistor 230MHz 27dB 300W TO-270 WB-4

MRFE6VP5300NR1 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 27dB 300W TO-270 WB-4 High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industri...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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