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1 Product Description Item Descriptions Brand ALL Brands Model Number ALL Models Available Place of Origin China, US, KR, Taiwan China, HK China, etc. Package Yes Product Name Integrated Circuits Condition New ...
Product Overview The ULN2003A is a high-voltage, high-current Darlington array integrated circuit, comprising seven NPN Darlington pairs with a common emitter and open-collector outputs. Each Darlington pair in...
UCC27524DGNR MSOP8 Electronic Components IC Chips Integrated Circuits IC PRODUCT DESCRIPTION Part number # UCC27524DGNR is manufactured by TI Technologies and distributed by Jalixin. As one of the leading distr...
VNS3NV04DPTR-E Programmable IC Chips Electronic Components IC Original ST PRODUCT DESCRIPTION Part number # VNS3NV04DPTR-E is manufactured by ST Technologies and distributed by Jalixin. As one of the leading di...
VNQ500PEPTR-E Programmable IC Chips Electronic Components IC Original ST PRODUCT DESCRIPTION Part number # VNQ500PEPTR-E is manufactured by ST Technologies and distributed by Jalixin. As one of the leading dist...
VN5T006ASPTR-E Programmable IC Chips Electronic Components IC Original ST PRODUCT DESCRIPTION Part number # VN5T006ASPTR-E is manufactured by ST Technologies and distributed by Jalixin. As one of the leading di...
VNQ7140AJTR Electronic Components IC Programmable IC Chips ST PRODUCT DESCRIPTION Part number # VNQ7140AJTR is manufactured by ST Technologies and distributed by Jalixin. As one of the leading distributors of e...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
...Mosfet Power Transistor DarliCM GROUPon Transistors HiVltg Hi-Crnt Darl Transistor Array 1 Features 500-mA-Rated Collector Current (Single Output) High-Voltage Outputs: 50 V Output Clamp Diodes Inputs Compat...
... Modules offer high-precision measurement and improves the productivity of electronic components. The relays feature a T-type circuit structure consisting of compact size and a longer lifecycle. The circuit ...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
... threshold voltage. This device is typically used in switching applications such as motor control, relay drivers, and other applications that require high-current switching. Key Features: • N-channel enhance...
..., high dV/dt capability, and improved avalanche performance. This device is ideal for use in DC-DC converters, motor drives, relay drivers, and other high power switching applications. Features: •...
...Relays - PCB Mount SPST-NO, 0.35A, 200V, SMD Omron Electronics G3VM-201WR MOSFET Surface-Mountable Relays Omron Electronics G3VM-201WR MOSFET Surface-Mountable Relays are high-current relays in a P-SON4 pack...
...MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technolo...
...MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in ...
...Relays - PCB Mount Small DIP4 package, 600V, 90mA with High dielectric strength type Omron Electronics G3VM AY/DY High Dielectric Strength MOSFET Relays Omron Electronics G3VM AY/DY High Dielectric Strength ...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible AP...