| Sign In | Join Free | My burrillandco.com |
|
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
...Mosfet Power Transistor DarliCM GROUPon Transistors HiVltg Hi-Crnt Darl Transistor Array 1 Features 500-mA-Rated Collector Current (Single Output) High-Voltage Outputs: 50 V Output Clamp Diodes Inputs Compat...
...MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications, offering extremely low RDS(on). It features a rugged and reliable design, suitable for direct logi...
...MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, a high-density cell design for extremely low RDS(ON), and a rugged polysilicon gate cell structure. This RoHS compliant and hal...
...MOSFET in a SOT23 package, designed for applications requiring low RDS(on) at 10V VGS. It features 5V logic-level control, HMB ESD protection, and is Pb-Free and RoHS Compliant. This MOSFET is suitable for u...
... Modules offer high-precision measurement and improves the productivity of electronic components. The relays feature a T-type circuit structure consisting of compact size and a longer lifecycle. The circuit ...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
...MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant...
...MOSFET in a SOT-23 plastic package, designed for direct interface with C-MOS and TTL circuits due to its low threshold voltage. It features high-speed switching and an improved ESD capability of 1000V. This ...
...MOSFET designed for various switching applications. It offers low RDS(on) at gate-source voltages of -4.5V and -3.3V, making it suitable for logic-level control. Key features include ESD protection and a com...
...MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters, power management fu...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
... threshold voltage. This device is typically used in switching applications such as motor control, relay drivers, and other applications that require high-current switching. Key Features: • N-channel enhance...
..., high dV/dt capability, and improved avalanche performance. This device is ideal for use in DC-DC converters, motor drives, relay drivers, and other high power switching applications. Features: •...
...Relays - PCB Mount SPST-NO, 0.35A, 200V, SMD Omron Electronics G3VM-201WR MOSFET Surface-Mountable Relays Omron Electronics G3VM-201WR MOSFET Surface-Mountable Relays are high-current relays in a P-SON4 pack...
...MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technolo...
...MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in ...
...Relays - PCB Mount Small DIP4 package, 600V, 90mA with High dielectric strength type Omron Electronics G3VM AY/DY High Dielectric Strength MOSFET Relays Omron Electronics G3VM AY/DY High Dielectric Strength ...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
...MOSFET designed for efficient switching applications. Featuring a VDS of 60V and ID of 0.35A, it offers low on-state resistance (RDS(ON) TYP 1.5 @VGS=10V, TYP 1.7 @VGS=4.5V) and very fast switching speeds. I...