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...resistance, low input capacitance, and a fast switching speed. Features: • Low On-Resistance: RDS(on)=3.3mΩ (VGS= -2.5V) • Low Input Capacitance: Ciss=125pF (VGS= -2.5V) • Fast Switching Speed: tON=5ns (VGS=...
FQT7N10LTF MOSFET Power Electronics TO-261-4 Package N-Channel switching performance variable switching power FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Co...
FQP33N10 MOSFET Power Electronics High Power Switching Capability Low On-Resistance and Fast Switching Times FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - C...
...MOSFET Power Electronics High Performance Low Cost Switching Solution Description: The IRFU210PBF is a high-performance N-Channel MOSFET designed for use in power applications. It features a low gate charge,...
..., motor control, and power management systems. It features low on-state resistance, fast switching times, and high efficiency. Features: • Low on-state resistance (RDS(on)) for low conduction losses • Fast s...
...MOSFET Power Electronics: Features: -100V N-Channel MOSFET -Typical RDS(on) = 0.052Ohm -Low gate charge (Qg) -Low Crss -AEC-Q101 Qualified Applications: -Power Switching -Battery Protection -DC-DC Converters...
...MOSFET Power Electronics Features: • N-Channel • 100V/34A • Low On-Resistance RDS(on) • Fast Switching • Avalanche Rated • Low Gate Charge (Typical) • ESD Rated • RoHS Compliant Applications: • DC-DC Convert...
...MOSFET Product Description: The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applications. This device is designed to minimize the on-state resistance while providing super...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
HF-15KW High Frequency Induction Heating Machine: Advantage: 1 Mosfet Type, high Frequency 2 DELIXI Air Switch 3 Phase Bridge ( Germany IXYS) 4 Filter Capacitor (Janpan chemi-con) 5 All screws are Stainless Ste...
LM1951T switching power mosfet amplifier ic chip Power Mosfet Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high current, high voltage, high side (PNP) switch with a built-in er...
...MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalan...
...Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Sup...
...resistance andbull; Fast switching speed andbull; Low threshold andbull; Low gate drive andbull; DPAK package andnbsp; Applications andbull; DC-DC converters andbull; Power management functions andbull; Disc...
NCE6050A 60V 50A SiC MOSFET Low Rds(on) 18mΩ Fast Switching High Frequency High Efficiency Robust Performance TO-247 Package For Server SMPS & Motor Drives Features VDS =60V,ID =50A ......
... for small designs through high efficiency and integrated high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and by selecting a hi...
...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......