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BSC100N06LS3G Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Description : Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters. Excellent gate charge x RDS(on) product (FOM...
LM1951T switching power mosfet amplifier ic chip Power Mosfet Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high current, high voltage, high side (PNP) switch with a built-in er...
...MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalan...
...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
...Switching Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high...
...Switching Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high...
... for small designs through high efficiency and integrated high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and by selecting a hi...
... saving. 3. Three phase input power supply, DC output. welding current can be precisely controlled. 4. Excellent HF(high frequency)arc starting, deep penetration, strong compensation capability and little sp...
... saving. 3. Three phase input power supply, DC output. welding current can be precisely controlled. 4. Excellent HF(high frequency)arc starting, deep penetration, strong compensation capability and little sp...
...MOSFETs Transistors Product Description Of IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Power MOSFETs are superjunction MOSFETs that address xEV applications where MOSFETs are switched at low frequency. Specification...
... for on-state efficiency. This means that the MOSFET is able to operate at a high level of efficiency, providing optimal power output while minimizing heat dissipation. Additionally, this MOSFET has undergon...
...MOSFET For Signal Conditioning TO-263C Product Description: One of the key advantages of the Low Voltage MOSFET is its ability to minimize switching loss. This is achieved through the MOSFET's low gate charg...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
...Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
...MOSFET Power Electronics Reliable High-Performance MOSFETs for Power Management Description: The IRL U024NPBF is a N-channel MOSFET from International Rectifier. It is a logic level FET suitable for switchin...
...MOSFET Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is a N-Channel enhancement mode, high-speed, power MOSFET device. This dev...
...MOSFET High Performance Power Electronics Solution for Maximum Efficiency Description: The IRFR4620TRLPBF is a N-Channel MOSFET transistor with a rated drain current of 10A and a maximum drain-source voltage...
... MOSFET with a drain-source voltage of 55V and a drain-source on-state resistance of 0.9ohm. The maximum power dissipation is 9W. This MOSFET has a drain-source breakdown voltage of 55V and a gate-source bre...
...MOSFET Power Electronics High Performance Low Power Consumption Product Name: SI1308EDL-T1-GE3 N-Channel Enhancement Mode MOSFET Product Description: The SI1308EDL-T1-GE3 is a N-Channel Enhancement Mode Meta...