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.... It features a low on-resistance, fast switching speed and wide voltage range, making it suitable for power supply and motor control applications. Product Specifications: • Drain-Source ......
FDS2572 MOSFET Power Electronics The FDS2572 is a high-performance MOSFET power electronics module designed for use in a variety of applications. It features a high-efficiency design that is capable of handling...
... voltage of 30V and a maximum continuous drain current of 8.5A. Its gate-source voltage is rated at -10V to +20V. It features fast switching times, low gate charge and low capacitance. Features: - Maximum dr...
...low on-state resistance, high switching speed, and good thermal management characteristics. This device is suitable for use in a variety of power topologies, including buck converters, boost ......
FDN86265P is an advanced Power MOSFET from Fairchild Semiconductor. It is designed to provide superior performance in a wide range of applications. This MOSFET offers excellent switching performance and low on-...
FQT13N06TF MOSFET Power Electronics Product Description: The FQT13N06TF is a high-performance, low-cost, high-side power MOSFET that is ideal for a wide range of applications. It is designed to provide superior...
FDT86113LZ MOSFET Power Electronics Description: This FDT86113LZ MOSFET Power Electronics is designed for high-efficiency switching systems, providing a high level of integration and low power losses. It has a ...
Product Listing: Product Name: IRF7410TRPBF MOSFET Package: TO-220 Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 10A Rds On (max) @ Id, Vgs: 0.068 Ohm @ 10A, 10V Vgs(th) (max) @ Id: 4V @ 250...
IPB60R380C6 MOSFET Power Electronic Module High-Performance Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25C 10.6A...
...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan...
...MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide r...
... V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rat...
...Mosfet Driver Using Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The comp...
...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ga...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rat...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...