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...MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features comb...
... the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of ot...
... and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other a...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These featur...
... MAX Typ Typ CS2N65A5 TO-252 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: This MOSFET product is built with advanced MOSFET technology which ensures low ON resistance, 100% avalanche tested, low Cis...
...MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
... - Fast Switching - 100V Drain-Source Breakdown Voltage - RDS(on) = 0.065 Ohms - 175C Operating Temperature - 8.5A Continuous Drain Current - ......
... of only 7.6nC and an on-resistance of only 35mΩ. The MOSFET is capable of operation at high current levels, up to 10A, making it well-suited for a variety of applications. Features: - Low-voltage operation ...
...MOSFET Power Electronics High Quality High Efficiency and Reliability Product Description: The SI7658ADP-T1-GE3 is a N-Channel MOSFET with an embedded gate protection diode. This device is designed for use i...
IRFS4310TRLPBF High-Performance MOSFET for Power Electronics Applications Description: The IRFS4310TRLPBF MOSFET is a high-speed, low RDS(on) N-channel power MOSFET designed to optimize switching performance wi...
...Rectifier. This MOSFET is designed with a low gate-source resistance, enabling low power loss and improved switching performance. The IRFS4410ZTRLPBF is made with a planar structure and uses a combination of...
... switching, and low on-state resistance. Product Specifications: • Voltage: 25V • Power Rating: 1.2W • On-State Resistance: 0.5 Ohms • Drain-Source ......
...MOSFET High Power Output and Low On-Resistance for Enhanced Performance Product Name: IRF135S203 MOSFET Product Description: The IRF135S203 is a high-performance MOSFET designed for use in a wide variety of ...
...MOSFET, N-Channel, 55V, 95A, 4.8mOhm, TO-247 Product Description: The IRFP4368PBF is an N-Channel Power MOSFET designed for use in high voltage switching applications. It is a robust, high performance part w...
Product: IRFH5210TRPBF MOSFET Description: This MOSFET is a high-voltage N-channel MOSFET featuring low RDS(on), fast switching, and low gate charge. It is designed to withstand high voltage, high current, and ...
...high power dissipation, low gate charge, and low capacitance. The MOSFET is suitable for use in switching applications. Features: • Breakdown Voltage: 500V • Drain-Source Voltage: 500V • Gate-Source Voltage:...
...MOSFET Features: • N-Channel MOSFET • Low Input Capacitance • Low Gate Charge • Fast Switching Speed • High Avalanche Energy Rating • 100V Drain-Source Breakdown Voltage • Low On-Resistance • RoHS Compliant ...
..., and has an extremely low gate-source threshold voltage. This device is ideal for power switching applications, and can handle a wide range of load current and drain-source voltage ratings. Features: • Low ...
...MOSFET Power Electronics for Enhanced Efficiency and Reliability IRFS7734TRLPBF MOSFET Transistor Product Description: The IRFS7734TRLPBF is a P-channel enhancement mode power MOSFET with a low on-resistance...