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...Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100%...
...MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers a continuous drain current of 120A (package limit) and a...
... MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a continuous drain current of 5.0A, low gate charge, ...
... gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a typical on-resistance of 0.75 at VGS=10V and a continuous drain current of 10.0A at ......
... Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high...
...MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. The MOSFET offer...
...a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low Rdson, fully cha...
... MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. This MOSFET is designed for power switching a...
...MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, a...
...Switching MOSFET designed for high-frequency applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS guaranteed performance. This MOSFET is suitable fo...
Product Overview The HSP100N15 is an N-Channel Fast Switching MOSFET designed for high-frequency applications. It features a 150V drain-source voltage rating and a low on-resistance (RDS(ON)) of 7.3 m typ. This...
...MOSFET from HUAKE semiconductors. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high frequency switching mode power ...
.... It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.Product Attributes Brand: HUAKE semiconductors Produ...
...FKD8066 is an N-Channel 80V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification. It features advanced trench MOS technology, 100% EAS guaranteed, and fast switching spee...
...MOSFET designed for power switching applications. It features low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity, making it suitable for hard switched and high-frequenc...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
Product Overview The AO4406 is a low voltage N-channel MOSFET designed for high-frequency switching applications. It features ultra-low on-resistance, making it suitable for boost converters and synchronous rec...
...MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...