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...SMF7N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanc...
...Power MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including high current load applications, load s...
...Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100%...
...MOSFET designed for power switching applications. It offers a 100V drain-source voltage and 15A continuous drain current with a low on-resistance of 80 m typ. at VGS = 10V. This device is 100% avalanche test...
...MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers excellent performance with a low RDS(on) of 13m (Typ) at VGS=10V, low...
... N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-freque...
... N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high freq...
...Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers excellent performance with low gate charge, low ...
...Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100%...
... low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a typical RDS(on) of 0.80 at VGS=10V and a continuous drain current of 10.0A.......
...SMD2N65 is a 650V N-Channel MOSFET designed for high-frequency switching mode power supplies and active power factor correction applications. It offers advantages such as low gate charge, low Crss, 100% aval...
... is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% a...
... Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high...
... fully characterized avalanche voltage and current for robust performance, along with high EAS and special process technology for superior ESD capability. This MOSFET is ideal for power switching application...
... reverse recovery, and robust avalanche capability. Designed for applications in solar inverters, EV charging stations, UPS, and industrial power supplies, this MOSFET contributes to system efficiency improv...
...MOSFET designed for demanding power applications. It offers a 1200 V drain-to-source voltage and a continuous drain current of 100 A, with a low on-resistance of 21 m. This MOSFET provides significant benefi...
... is an N-channel MOSFET in a TO-220FL plastic package, designed for high-efficiency applications. It features low gate charge and low feedback capacitance, enabling fast switching speeds. This MOSFET is idea...
... Mode Power MOSFET designed for power switching applications. It features an excellent package for good heat dissipation and a high-density cell design for ultra-low RDS(on). This MOSFET is suitable for hard...
.... Designed for a wide variety of applications, it features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and is 100% single pulse avalanche energy tested. This RoHS-compliant ...
... variety of applications, it features a high-density cell design for ultra-low Rdson and is housed in a RoHS-compliant SOP-8 package. This MOSFET is suitable for power switching applications, hard switched a...